BFU520YF Allicdata Electronics
Allicdata Part #:

BFU520YF-ND

Manufacturer Part#:

BFU520YF

Price: $ 0.16
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS RF NPN 12V 30MA 6TSSOP
More Detail: RF Transistor 2 NPN (Dual) 12V 30mA 10GHz 450mW Su...
DataSheet: BFU520YF datasheetBFU520YF Datasheet/PDF
Quantity: 1000
10000 +: $ 0.15082
Stock 1000Can Ship Immediately
$ 0.16
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Gain: 14dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: 5-TSSOP
Base Part Number: BFU520
Description

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BFU520YF is a NPN silicon double heterojunction bipolar transistor that operates in radio frequency applications in the range of 2.4GHz to 2.5GHz. It is designed for high-efficiency broadband amplifiers and mixers. It is one of the most popular radio-frequency (RF) bipolar junction transistors (BJT) that has been used for many years. This transistor has a low noise figure and a high third-order intercept point, which make it so useful in high-end RF applications.

The important parameters of the BFU520YF transistor are the operating temperature range (-55 to +150°C), the collector-emitter breakdown voltage (30V), the collector current (0.2A) and its power gain (9.6dB). It is a very reliable and rugged transistor, making it useful in a wide range of RF applications.

The working principle of the transistor is based on the flow of electrical current through it. An electric current between the emitter and the collector can be controlled by the base. This current is usually used to amplify the signal in an electronic circuit.

In an amplifier, the transistor amplifies incoming signals from an antenna, allowing them to be better picked up by a receiver. In a mixer, the transistor amplifies signals from the local oscillator so that they can be mixed with the incoming signals.

The BFU520YF transistor is also widely used in wireless communications, as it is able to provide low-noise and high-power amplifiers with a wide frequency range. It is an ideal choice for use in cell phone and wireless data networks, as well as in point-to-point communication systems such as Wi-Fi and Bluetooth.

BFU520YF transistors can also be used in a variety of other RF applications, such as RF amplifiers, mixers, oscillators, power amplifiers, and tuners. They are used in military and aerospace applications as they provide high-power and stability.

In conclusion, the BFU520YF transistor is one of the most widely used transistors in the RF applications. It is reliable and provides good performance. It is easy to use and can be found in many applications, such as wireless communication, cellular phones, antennas, RF amplifiers and mixers, military and aerospace, and many others.

The specific data is subject to PDF, and the above content is for reference

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