BFU530XRVL Allicdata Electronics
Allicdata Part #:

BFU530XRVL-ND

Manufacturer Part#:

BFU530XRVL

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS RF NPN 12V 40MA SOT-143R
More Detail: RF Transistor NPN 12V 40mA 11GHz 450mW Surface Mou...
DataSheet: BFU530XRVL datasheetBFU530XRVL Datasheet/PDF
Quantity: 1000
10000 +: $ 0.07655
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Gain: 16.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-143R
Supplier Device Package: SOT-143R
Base Part Number: BFU530
Description

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BFU530XRVL application field and working principle

The BFU530XRVL is a high-frequency bipolar transistor produced by NXP Semiconductors. It is designed for use in applications such as RF amplifiers, oscillators, switching circuits, and RF power amplifiers in mobile phones. It is manufactured in a plastic surface value package, and can withstand high power dissipation.

The BFU530XRVL is a single-ended, NPN Silicon Rectifier, rated at 50 volts maximum. It has a maximum collector current of 500 mA and a power dissipation of up to 1 Watt. It can operate at frequencies up to 2 GHz, making it suitable for a wide range of RF applications.

The transistor works on a principle known as electron transport, which is the process by which an electric current is run through a semiconductor material. An electric charge is created when electrons flow through the semiconductor material. This charge is then used to create a voltage difference between two terminals, known as the collector and the emitter. The voltage then creates a flow of electrons from the collector terminal to the emitter terminal, creating a steady stream of electric current.

The transistor is designed to operate under high power, meaning that it must be designed with high-end components and materials. For this reason, the BFU530XRVL often exhibits superior performances when compared to other types of bipolar transistors. In addition, the device is designed to handle high levels of frequency, making it suitable for use in RF amplifiers and RF power amplifiers.

The BFU530XRVL is capable of operating at temperature ranges from -55°C to +150°C, making it suitable for a wide range of applications. In addition, it is resistant to aging, radiation, and electromagnetic interference.

The BFU530XRVL is a versatile and reliable device suitable for a wide range of RF applications. Its high power handling capabilities and broad frequency range make it an ideal choice for RF amplifiers, RF power amplifiers, and switching circuits. Its long-term reliability and temperature range make it a reliable component for various applications involving high power and high-frequency operations.

The specific data is subject to PDF, and the above content is for reference

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