BFU530VL Allicdata Electronics
Allicdata Part #:

BFU530VL-ND

Manufacturer Part#:

BFU530VL

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS RF NPN 12V 40MA SOT-143B
More Detail: RF Transistor NPN 12V 40mA 11GHz 450mW Surface Mou...
DataSheet: BFU530VL datasheetBFU530VL Datasheet/PDF
Quantity: 1000
10000 +: $ 0.07655
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Gain: 15.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B
Base Part Number: BFU530
Description

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The BFU530VL is a Bipolar Junction Transistor (BJT) which can be used in radio frequency (RF) applications. It is a NPN (Positive-Negative-Positive) type transistor, with a maximum current gain of 160 and a frequency range of up to 250 MHz.

This transistor has a wide range of applications where high frequency signals are required. It is often used to amplify signals in radio receivers and transmitters, and can also be used in TV or FM receivers. It is relatively low-cost, and has a wide range of temperature ratings, making it suitable for use in a variety of conditions. Additionally, it has good stability and is relatively easy to use.

The BFU530VL can be used in both its common-emitter (CE) and common-base (CB) configurations. In the CE configuration, the transistor amplifies the input signal when the base-emitter voltage is increased. This acts like a variable resistor, and the gain of the transistor is determined by the ratio of the resistance of the collector-emitter terminal to the base-emitter. In the CB configuration, the transistor acts like a voltage-controlled variable resistor, with the gain determined by the ratio of the emitter-base resistance to the collector-base resistance.

In addition to its amplifier functions, the BFU530VL can also be used as a switch. In this configuration, the transistor acts like an electronic switch, controlling the flow of current through the collector-emitter junction when a voltage is applied to the base. This can be used to switch on and off high frequency circuits, or to control the speed of a motor.

Finally, the BFU530VL is also capable of producing harmonic waves. This is because it has a large reverse current gain, meaning that it is able to produce frequencies which are much higher than the input frequency. This effect can be used to generate higher audio frequencies for audio amplifiers, or for signal-generation applications.

The BFU530VL is an excellent choice for RF applications due to its wide range of features, and its price. The device has a wide operating temperature range, is relatively easy to use, and has good stability. It can be used both as an amplifier and a switch, and can even produce harmonic waves, making it a very versatile device.

The specific data is subject to PDF, and the above content is for reference

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