BFU530R Allicdata Electronics
Allicdata Part #:

568-11510-2-ND

Manufacturer Part#:

BFU530R

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS RF NPN 12V 40MA SOT-143B
More Detail: RF Transistor NPN 12V 40mA 11GHz 450mW Surface Mou...
DataSheet: BFU530R datasheetBFU530R Datasheet/PDF
Quantity: 1000
3000 +: $ 0.10029
6000 +: $ 0.09382
15000 +: $ 0.08735
30000 +: $ 0.08605
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
Gain: 21.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B
Base Part Number: BFU530
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BFU530R is a transistor used in a wide range of applications. It is a bipolar junction transistor (BJT) specifically made for radio-frequency (RF) amplification. The device is manufactured in a dual-grafted form and is suitable for application in portable and hand-held mobile units. Through its outstanding gain and excellent power efficiency, this device provides superior performance in both linear and non-linear(low distortion) operations.

The major application of BFU530R is to provide superior distortion performance, which is essential for improved modulation accuracy. It is used for high-power applications in which linear performance is paramount, such as radio transceivers, base transceivers, and linear radio frequency (RF) amplifiers. It is also used as a driver stage in RF power modules and as a power amplifier in Video/Audio applications.

The working principle of the BFU530R is simple. It consists of a PN junction formed by two doped semiconductor materials. The current flow direction is controlled by the base voltage, and the output current is determined by the input voltage. The device is also frequency-dependent, which means that its characteristics change with the frequency of the signal. This makes the transistor suitable for use in RF amplifiers and other applications requiring a high frequency response.

To maximize performance, the device is designed to be used with high-quality circuit components and proper biasing circuitry. A critical component of any circuit that uses BFU530R is the biasing resistor, which must be placed between the base and collector of the device. This component is used to ensure that the device remains in the linear region of operation. Additionally, proper thermal management should be employed to avoid thermal runaway, which could lead to device failure.

In summary, BFU530R is a bipolar junction transistor specifically used in radio-frequency applications. It provides superior linear performance, excellent power efficiency, and outstanding gain. When properly biased with the right components and proper thermal management, it is capable of providing reliable and consistent performance. Its wide range of applications makes it an ideal choice for many design projects.

The specific data is subject to PDF, and the above content is for reference

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