BFU550XAR Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BFU550XAR series are a family of PNP Silicon Planar Heterojunction Field Effect Transistors (H-FET), designed primarily as low noise Terman VHF Receivers and mixer applications with frequencies range from 200MHz to 600MHz. By using a new alloy and structure process, these transistors provide stable performance and are extremely sensitive to RF signals, making them suitable for use in RF amplifiers, receiver power amplifiers, local oscillators and FM and AM receivers. This series also offers excellent gain and output power characteristics.

The working principle of the BFU550XAR series is based upon the basic operation of a PNP Silicon Planar H-FET. The formation and operation of a H-FET consists of a base layer of semiconductors with a thin high-impedance gate layer positioned over it. A bipolar power supply to the gate causes a weak inversion layer which modulates the source and drain currents, reflecting the electrical characteristics of a static device and allowing the H-FETs to be used as a low-current device to provide high-frequency performance with low noise. In addition to its low noise, the BFU550XAR series has low power consumption, high frequency response and high linearity, making it suitable for a wide range of applications.

The main applications of BFU550XAR series include radio receivers, transmitters and wireless communication systems. Since its noise margin is very low, it is especially suited for low noise amplifiers, receiver power amplifiers, local oscillators and FM and AM radio receivers. It can also be used as a mixer in heterodyne style receivers.

The BFU550XAR series offers excellent gain and power output characteristics in its class. The output power is up to 7.5 watts with a corresponding gain of 38 dB with a one watt input power. The operating frequency range is 200MHz-600MHz, with a maximum frequency bandwidth of 3.2GHz, making it suitable for a wide range of applications. In addition, it has the ability to provide minimum noise figure while maintaining a low Power Consumption. The series also exhibits excellent linearity, with a typical differential gain of 0.06% and an excellent overall performance.

In conclusion, the BFU550XAR series is a family of PNP Silicon Planar Heterojunction Field Effect Transistors (H-FET). It is suitable for a wide range of RF applications given its low noise margin and excellent gain and power output characteristics. With minimal power consumption, excellent linearity and high frequency response, these transistors are ideal for use in RF amplifiers, receivers, transmitters and wireless communication systems. The high sensitivity to RF signals makes this series an ideal choice for designers who require the utmost in performance for their design needs.

The specific data is subject to PDF, and the above content is for reference