BFU530WF

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	11GHz
Noise Figure (dB Typ @ f):	1.1dB @ 1.8GHz
Gain:	12.5dB
Power - Max:	450mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 10mA, 8V
Current - Collector (Ic) (Max):	40mA
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323-3
Base Part Number:	BFU530

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction
BFU530WF is a type of bipolar junction transistor (BJT), specifically a radio frequency (RF) transistor. It is specifically designed for high-frequency and high power amplifiers, such as in FM radio amplifiers. It is also used in switching circuits and other audio or radio frequency applications. BFU530WF is one of the most popularly used transistors for these particular types of applications.Properties of BFU530WF
BFU530WF is a NPN silicon transistor. It features a low noise, low voltage, and low gain. The maximum gain of the device is 30 kHz and the DC current gain is 13 dB minimum. Its rated collector current is 500 mA and its maximum power dissipation is 350 mW. The transistor’s operating temperature range is -65°C to 150°C.Structure of BFU530WF
BFU530WF has three leads. The collector lead is the one located on the right side of the transistor, the emitter is located on the left side and the base is located in the middle. The physical structure of the transistor contains three layers, termed as the collector, base and emitter layers respectively. The collector layer is heavily doped, meaning it contains a large concentration of impurities, where as the base and emitter layers are lightly doped, each containing a much lower concentration of impurities.Working Principle of BFU530WF
The principle behind the BFU530WF transistor is called the bipolar-junction theory or BJT. This concept states that p-type materials and n-type materials can be combined in order to produce a voltage controlled current. In the case of the BFU530WF this process takes places between the collector, base and emitter layers.When a voltage is applied between the collector and emitter layers, electrons move from the emitter layer to the collector layer. This is known as forward bias. Since the collector layer is heavily doped, a large number of electrons can move through it. The base layer, which is lightly doped, acts as a barrier limiting the current. This barrier is controlled by the voltage applied to the base terminal.If a negative voltage is applied between the collector and emitter layers then no current flows. This is known as reverse bias. In this case the collector layer will act as an insulator preventing the flow of electrons. This is the operating principle of the BFU530WF transistor.Applications of BFU530WF
BFU530WF transistors are mainly used in FM radio amplifiers and switching circuits. They are also used in a wide variety of audio and RF applications such as tuned amplifiers, RF oscillators, mixers and modulators.In FM radio amplifiers, BFU530WF transistors provide high gain and high switching speed making them an ideal choice for high frequency applications. The transistor’s low noise and low voltage capabilities make it well suited for use in tuned amplifier, oscillator and mixer circuits.In switching circuits, BFU530WF transistors are used to control the flow of current in switches, relays and other electrical devices. The transistor’s fast switching speeds and low current requirements make them an ideal choice for these types of applications.Conclusion
BFU530WF transistors are widely used in radio frequency and audio applications. They are well suited for high frequency, high power amplifier applications as well as in switching circuits. The transistor’s low noise, low voltage, and low gain capabilities make it a popular choice for many types of RF and audio circuits.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description