Allicdata Part #: | BFU550WF-ND |
Manufacturer Part#: |
BFU550WF |
Price: | $ 0.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS RF NPN 12V 50MA SOT-323 |
More Detail: | RF Transistor NPN 12V 50mA 11GHz 450mW Surface Mou... |
DataSheet: | BFU550WF Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.08505 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 11GHz |
Noise Figure (dB Typ @ f): | 1.3dB @ 1.8GHz |
Gain: | 12dB |
Power - Max: | 450mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 15mA, 8V |
Current - Collector (Ic) (Max): | 50mA |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323-3 |
Base Part Number: | BFU550 |
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The BFU550WF is the latest addition to the RF transistors - Bipolar (BJT) family, which has been designed to make it suitable for applications in a wide range of electronic devices. The BFU550WF operates up to frequencies of 150 MHz, making it a good choice for applications such as mobile communication systems, Wi-Fi networking and RF power amplifiers.
The BFU550WF features a range of important properties that makes it a great choice for these applications. For example, it features excellent linearity, high gain and high power output capability with low distortion. As well as this, it also shows strong power handling and low noise characteristics, making it a good choice for use in modern radio frequency circuits.
The basic design of the BFU550WF works on the same principle as other transistors, using a junction of n-type (negative type) and p-type (positive type) silicon to control the flow of current in the transistor. The current flow is controlled in the junction by manipulating the base-to-collector voltage, which changes the conductance and reshapes the output current waveform.
The BFU550WF also features a high common-mode rejection ratio which makes it much more effective at filtering out unwanted ambient signals and noise than a regular transistor. This increases the linearity and gain of the device and allows it to pick up more signals at lower energy levels. Additionally, it also features a low power consumption and low heat dissipation.
The BFU550WF can be used as an efficient RF power amplifier in applications such as cellular communication, Wi-Fi networks, GPS devices and other consumer electronic products. Its high linearity and gain characteristics make it ideal for use in RF power amplifiers, where it can be used to boost the signal level without causing distortion or degrading the signal quality.
The BFU550WF is also a great choice for use in wideband applications, where its high-frequency capabilities and low power consumption make it suitable for use in receivers and transmitters. Its high linearity makes it particularly useful for applications such as radio broadcast systems and radio frequency communications.
Overall, the BFU550WF is an excellent choice for its range of applications in the RF transistors - Bipolar (BJT) family. Its excellent gain, linearity, power handling and noise characteristics make it a great choice for use in the variety of applications mentioned above.
The specific data is subject to PDF, and the above content is for reference
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BFU530XRVL | NXP USA Inc | 0.08 $ | 1000 | TRANS RF NPN 12V 40MA SOT... |
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BFU550WF | NXP USA Inc | 0.1 $ | 1000 | TRANS RF NPN 12V 50MA SOT... |
BFU550XVL | NXP USA Inc | 0.1 $ | 1000 | TRANS RF NPN 12V 50MA SOT... |
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