BFU550R

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	11GHz
Noise Figure (dB Typ @ f):	0.7dB @ 900MHz
Gain:	21dB
Power - Max:	450mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 15mA, 8V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-253-4, TO-253AA
Supplier Device Package:	SOT-143B
Base Part Number:	BFU550

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Bipolar Junction Transistor (BJT) is a type of solid-state transistor used in high frequency and/or high voltage applications. The BFU550R is a medium power RF transistor designed for VHF and UHF applications in the 50 to 500MHz frequency range. It is commonly used for RF amplifiers, oscillators, and switching applications.The BFU550R is a silicon NPN BJT, with a maximum collector current of 0.8A, grouped voltage of 30V and power dissipation of 300mW. Its maximum operating frequency is about 1000MHz, making it ideal for VHF and UHF applications. Its collector-emitter breakdown voltage is 40V, and the maximum Vceo of the device is 30V. The BFU550R is housed in a three-lead plastic package with a heat sink, which makes it resistant to environmental stress.The BFU550R has a dual-gate design, which allows it to be used in a variety of applications. The first gate is used to control the current in the device, while the second is used to control the voltage. The dual-gate design provides improved thermal stability and frequency response, making it suitable for both DC and RF operation. The BFU550R also features a low-input capacitance, making it ideal for high-frequency applications.The working principle of the BFU550R is based on the principle of transistors. The device consists of three terminals, the Base, Collector and Emitter (B-C-E), where the current flows from the Collector to the Emitter when a voltage is applied to the Base. When the voltage is applied, the current flows from the Collector to the Emitter and creates a collector-emitter voltage. The Base-Emitter voltage is created by the current flowing through the base, and this voltage is used to control the amount of current flowing in the transistor.The BFU550R is a versatile device, providing good gain and power performance in a wide range of applications. It is suitable for high-power radio frequency (RF) amplifiers, oscillators and switching applications. It can also be used in DC-DC converters, audio amplifiers and digital circuits. Its low-input capacitance makes it ideal for high-frequency applications. Its heat sink provides improved thermal stability and allows the device to operate in an extended temperature range.In conclusion, the BFU550R is a versatile device, offering excellent performance for high-frequency and/or high-voltage applications. It is a medium power RF transistor designed for VHF and UHF applications in the 50 to 500Mhz frequency range, and is based on the principle of transistors. It features a dual-gate design and low-input capacitance, making it ideal for high-frequency applications. Its heat sink provides improved thermal stability and frequency response, making it suitable for DC and RF operation.

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