BFU520XAR

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The BFU520XAR is a state-of-the-art RF bipolar transistor that is well suited for applications that demand reliable performance in high power output and high frequency environments. This type of transistor is characterized by its outstanding performance in terms of linearity, gain, reverse isolation, gain flatness and low operating current. The transistor is a compact package, which makes it ideal for use in space-restricted environments.

The BFU520XAR is applicable in the frequency range from 1.4GHz to 2GHz and has a maximum DC power output of 30W. It can be used for both linear and non-linear amplification. In addition, the transistor features a low-noise figure, high breakdown voltage, and high linearity.

In terms of its architecture, the BFU520XAR is an NPN transistor that consists of two electrode structures and two complementary structures, one connected to its collector and the other to its base. It also features an internally regulated current source connected to its base. The collector-base structure of the BFU520XAR is optimized to provide excellent thermal stability, linearity, and low distortion levels.

The working principle of the BFU520XAR is based on a differential pair of BJTs, which are embedded in a common monolithic collector. The BJT differential pair works in such a way that the base current of one BJT is modulated with the input signal and the other BJT works as a constant current source. As the base current of one BJT is changed, the collector current of the corresponding BJT is also changed, which results in an amplification of the input signal.

The differential pair of BJTs is further enhanced by a pair of cascode transistors that allow the switching characteristic of the transistor to be modified. This enables the transistor to provide higher output power and makes it suitable for use in high power output applications.

The BFU520XAR is a robust and reliable RF bipolar transistor that offers high performance in frequencies up to 2GHz. It is suitable for use in applications where high power output and high linearity are required. The transistor’s internal design ensures that it offers excellent thermal stability, low noise figure, and low distortion levels.

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