Allicdata Part #: | BFU520XRVL-ND |
Manufacturer Part#: |
BFU520XRVL |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS RF NPN 12V 30MA SOT-143R |
More Detail: | RF Transistor NPN 12V 30mA 10.5GHz 450mW Surface M... |
DataSheet: | BFU520XRVL Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.07308 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 10.5GHz |
Noise Figure (dB Typ @ f): | 1dB @ 1.8GHz |
Gain: | 17.5dB |
Power - Max: | 450mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 8V |
Current - Collector (Ic) (Max): | 30mA |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-143R |
Supplier Device Package: | SOT-143R |
Base Part Number: | BFU520 |
Description
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BFU520XRVL Application Field and Working Principle
The BFU520XRVL is a type of bipolar junction transistor (BJT) specifically designed for RF applications. It is produced by NXP, one of the world\'s leading semiconductor companies. It is used in various applications such as television antennas and car antennas.The BFU520XRVL is a surface mount type of transistor with two NPN transistors per die. It operates at frequencies ranging from 200 MHz to 2 GHz with an IC gain of 15.5 dB. It is also capable of handling 8V at 240mA of power in a tiny package size of 3x2x1.2mm.To understand the working principle of the BFU520XRVL, let\'s first define what a BJT is. A BJT is a three-terminal active semiconductor device that can act as either an amplifier or a switch. It consists of two p-n junctions, also known as regions of opposite doping, which form three distinct layers around a central region (base layer). The operating principle of the BFU520XRVL is simply amplification or switching using an input signal applied to the base (input) of the BJT. As the base current (input signal) is increased or decreased, the amount of current that can flow between the collector and emitter (output signal) will also increase or decrease accordingly.In RF applications, the collector-emitter resistance of the BJT is important for maintaining signal integrity. This is because the resistance of the BJT will affect the signal propagation and define the amount of current available to power the load. The BFU520XRVL transistor offers a low collector-emitter resistance of 0.3 ohms, making it efficient and well-suited for RF applications.The other important factor to consider when selecting a BJT for RF applications is the signal to noise ratio (SNR). The SNR of the BFU520XRVL is 66 dB and is more than suitable for most RF applications.In conclusion, the BFU520XRVL is a specialized type of bipolar junction transistor that is optimized for RF applications. Despite being a small package size, it is able to handle 8V at 240mA of power and provides excellent signal integrity due to its low collector-emitter resistance and good signal to noise ratio. This makes it ideal for television antennas, car antennas and other RF based applications.The specific data is subject to PDF, and the above content is for reference
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