BFU520XVL

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors - Bipolar (BJT) - RF is a type of transistor used extensively in radio frequency (RF) applications due to their high frequency response. The BFU520XVL is a perfect example of such a device. It is a high-power silicon NPN transistor with excellent broadband characteristics and low thermal resistance.

The BFU520XVL is designed to handle up to 16.5A collector current and 1200V collector-emitter voltage. This makes it well suited for a wide range of RF applications, including power amplifiers, switching circuits, active filters, oscillators, and RF power supplies. Its metal ceramic package offers excellent thermal stability and reliable long-term performance.

The BFU520XVL has a maximum collector-emitter voltage of 200V, which allows it to operate at up to 7GHz. Its low capacitance and inductance help ensure maximum flexibility in design. The transistor is also quite robust, withstanding temperatures up to 150°C and high junction temperatures up to 150°C without any external protection.

In terms of its basic working principle, the BFU520XVL consists of two N-type layers and one P-type layer. When the base-emitter voltage is increased, the current inside flow from the base to the emitter. This creates an amplified signal that can be used for amplification, switching, or other RF applications.

The BFU520XVL amplifier is an ideal solution for RF applications that require a high frequency response and high power. Thanks to its excellent high frequency response, wide voltage range, and robust construction, it can deliver clean, reliable performance with minimal heat generation. It’s also suitable for use in a wide range of commercial and industrial applications.

In summary, the BFU520XVL is an excellent choice for high power RF applications. Its metal ceramic package and excellent broadband characteristics make it an ideal candidate for power amplifiers, switching circuits, active filters, oscillators, and RF power supplies. Its robust construction and excellent temperature tolerance make it suitable for use even in demanding industrial environments. In addition, its low capacitance and inductance ensure maximum flexibility for design.

The specific data is subject to PDF, and the above content is for reference