BFU520XRR Allicdata Electronics
Allicdata Part #:

568-11507-2-ND

Manufacturer Part#:

BFU520XRR

Price: $ 0.09
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS RF NPN 12V 30MA SOT-143R
More Detail: RF Transistor NPN 12V 30mA 10.5GHz 450mW Surface M...
DataSheet: BFU520XRR datasheetBFU520XRR Datasheet/PDF
Quantity: 3000
3000 +: $ 0.08316
6000 +: $ 0.07812
15000 +: $ 0.07308
30000 +: $ 0.06703
Stock 3000Can Ship Immediately
$ 0.09
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10.5GHz
Noise Figure (dB Typ @ f): 0.65dB @ 900MHz
Gain: 20dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-143R
Supplier Device Package: SOT-143R
Base Part Number: BFU520
Description

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The BFU520XRR is a widely used surface-mount NPN bipolar transistor which is mainly used in radio-frequency (RF) applications. This transistor is a low-noise device that can be used in RF amplifiers, oscillators and other functions, such as switches and switching circuits. This low-power device offers excellent performance for a wide range of RF applications.

BFU520XRR is an NPN silicon transistor, the maximum collector-emitter voltage (VCEO) is 80V, the current gain –bandwidth product maximum (fT) is 950 MHz and the maximum output power (P1dB) at 5V, 10V, and 12V is 32dBm. The maximum operating temperature of this device is up to 150°C.

The BFU520XRR transistor can be used in a variety of RF circuits. It can be used as an amplifier in oscillator circuits to control the output voltage and frequency. It can also be used as a switch in switching circuits such as clock circuits or audio amplifiers. Additionally, it can be used as an IF amplifier in RF receivers and transmitters. The BFU520XRR transistor can also be used to boost the voltage in power amplifiers, thereby increasing the efficiency and output power of the amplifier.

The working principle of the BFU520XRR is based on the use of two opposing current sources, one connected to the collector, and one to the emitter of the transistor. When a small current is injected into the base of the transistor, it causes a larger current to flow between the collector and the emitter. The ratio of the current flowing through the collector relative to the current flowing from the emitter is called the current gain (or amplification factor). In some bipolar transistors, this current gain can reach values up to 1000 or higher.

The BFU520XRR has been designed for use in applications that require high gain, low noise, and high reverse isolation, such as RF amplifiers, oscillators, and switches. The low-noise characteristics make this transistor ideal for applications where a low noise figure needs to be achieved. It is also an excellent choice for applications that require a high current gain, such as amplifiers and oscillators.

In conclusion, the BFU520XRR is a widely used surface-mount bipolar transistor which is mainly used in radio-frequency (RF) applications. It is a low-noise device that offers excellent performance for a wide range of RF applications, including amplifiers, oscillators, switches, and switching circuits. This transistor works on the principle of two opposing current sources, and has a current gain which can reach values up to 1000 or higher. The combination of its high current gains, low noise figure, and reverse isolation make this transistor an excellent choice for RF applications.

The specific data is subject to PDF, and the above content is for reference

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