BFU530WX Allicdata Electronics
Allicdata Part #:

568-11511-2-ND

Manufacturer Part#:

BFU530WX

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS RF NPN 12V 40MA SOT-323
More Detail: RF Transistor NPN 12V 40mA 11GHz 450mW Surface Mou...
DataSheet: BFU530WX datasheetBFU530WX Datasheet/PDF
Quantity: 1000
3000 +: $ 0.08576
6000 +: $ 0.08056
15000 +: $ 0.07537
30000 +: $ 0.06913
Stock 1000Can Ship Immediately
$ 0.1
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
Gain: 18.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Base Part Number: BFU530
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

RF transistors are widely used and can be applied in a range of applications. The BFU530WX is a high voltage and high gain transistor that has a variety of uses in RF applications. This paper will discuss the application field and working principle of the BFU530WX.

The BFU530WX is a NPN silicon RF transistor that is specially designed for Class-AB RF amplification. It is suitable for high-linearity applications such as CATV amplifiers, satellite receivers, smart phones, and UpConverters. It is qualified to an extended temperature range from -40 degrees Celsius to 100 degrees Celsius, making it very reliable and ideal for high temperature applications. In addition, the BFU530WX is manufactured using advanced bipolar process technologies, and is compliant with the RoHS Directive for hazardous material content.

The BFU530WX has very low noise, high gain and high stability performance, making it ideal for high-performance RF systems. It has a maximum voltage rating of 800V, a maximum current rating of 7A, and a maximum power rating of 70W. The junction temperature range of this device is between -55 degrees Celsius and 150 degrees Celsius, and it can be used in temperature-sensitive applications. Its high voltage and high-gain characteristics make it a very desirable choice for RF amplifiers.

In terms of its working principle, the BFU530WX uses a NPN transistor as an active element. It operates using the principle of current amplification and can be used to amplify small signals into larger ones. It is composed of three terminals - the base, the collector, and the emitter. When a small current is applied to the base, a larger current flows from the collector to the emitter, resulting in an amplified output. The device also has high impedance and wide dynamic range, which makes it suitable for various RF applications.

The BFU530WX also has a few other advantages. It has high-heat tolerance and low-noise performance, making it ideal for RF applications. It also has a low-cost compared to other types of transistors and can be easily integrated into a wide range of circuits. In addition, it has a high-frequency response, making it suitable for a variety of Radio Frequency (RF) applications. With its wide range of features, the BFU530WX is a great choice for a variety of RF applications.

In conclusion, the BFU530WX is a high-voltage, high-gain, and high-stability RF transistor that was designed for Class-AB RF amplification. It is qualified to an extended temperature range, making it reliable and ideal for a variety of RF applications. It has an excellent high-frequency response, high-heat tolerance, and low-noise performance, making it ideal for a variety of Radio Frequency applications. With its wide range of features, the BFU530WX is an excellent choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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