BFU550AR Discrete Semiconductor Products

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The BFU550AR is a type of hot-carrier, NPN gain transistor designed for RF applications. It is designed to operate in the frequency range from 400 to 1000 MHz, making it suitable for use in many radio applications. The BFU550AR is one of the best performing NPN transistors for use in RF amplifiers for both linear power amplifiers and power amplifiers with higher gain. The device has a low noise figure of 0.45 dB at 900 MHz, a low power gain of 18 dB at 400 MHz, and a high power gain of 28 dB at 900 MHz.

This device has been designed to provide a high power output combined with low noise, making it suitable for applications such as VHF/UHF radio receivers, automotive multimedia systems, implanted medical devices, and wireless LANs. The BFU550AR is available in a variety of packages, including a 3-pin SOT23 package and a 5-pin SOT323 package, making it suitable for a wide range of applications.

In order to understand its operating principle, it is essential to be familiar with some key concepts of BJTs. Bipolar junction transistors are three terminal devices that consist of two PN junctions back-to-back. One of the junctions is known as the collector, the other is known as the emitter. When a small current is applied to the base terminal, it can control the flow of current between the collector and the emitter. This is known as the transistor’s gain, and is measured in terms of current amplification factor (β).

The BFU550AR has a current gain of up to 160 at 900 MHz, making it extremely useful for RF applications. It is also very sensitive to temperature changes as the gain increases by around 4 dB/°C, allowing it to be used in temperature compensated circuits.

The BFU550AR also has a high fT (transition frequency) of 500 MHz, making it ideal for use in high-frequency circuits. The fT is the frequency at which the collector current ceases to increase with increasing base current, and is a measure of the transistor\'s ability to amplify high-frequency signals.

The typical switching time of the BFU550AR is also extremely fast at 3 ns, allowing it to be used in switching applications such as modulators and frequency heterodynes in microwave systems. The device also has a low current noise of 0.57 nV/rt Hz and a low voltage noise of 0.32 nV/rt Hz making it suitable for use in low noise amplifiers.

In summary, the BFU550AR is a high performance, NPN gain transistor ideal for use in RF applications. It has a low noise figure, a high gain, a high fT, and a fast switching time, making it suitable for use in a variety of applications.

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