BFU520WX Allicdata Electronics
Allicdata Part #:

568-11505-2-ND

Manufacturer Part#:

BFU520WX

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS RF NPN 12V 30MA SOT-323
More Detail: RF Transistor NPN 12V 30mA 10GHz 450mW Surface Mou...
DataSheet: BFU520WX datasheetBFU520WX Datasheet/PDF
Quantity: 15000
3000 +: $ 0.09404
6000 +: $ 0.08797
15000 +: $ 0.08191
30000 +: $ 0.08069
Stock 15000Can Ship Immediately
$ 0.11
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
Gain: 18.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Base Part Number: BFU520
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BFU520WX is a high-speed silicon bipolar transistor for RF applications. It is the perfect choice for powering a wide range of RF applications. The transistor features a performance-to-cost ratio for a wide range of RF applications that is unmatched by any other device.The BFU520WX is a high-speed bipolar junction transistor (BJT) that provides enhanced performance for applications in wireless communications, broadcast, and other RF applications. The transistor is specifically designed with a performance-to-cost ratio that makes it the ideal choice for many RF applications. It has a low profile package that is well suited for high-density layouts, making it ideal for portable applications.The BFU520WX has a high-frequency performance of up to 3GHz and a high power-added efficiency of up to 30%. The transistor’s high-speed performance, as well as its high power-added efficiency, is due to its dual emitter structure and special transistor geometry. It also features an integrated bias block designed to reduce power supply noise and enhance thermal stability.The BFU520WX uses a cascode topology to improve linearity and reduce off-state current leakage. This ensures that the transistor maintains a low standing current and reduces power consumption in high-speed applications such as Wi-Fi and LTE.The transistor is also designed for low noise performance and improved sensitivity. It has a low noise figure and a high 2nd-order intercept point level, making it ideal for applications that require low-noise RF reception.In addition to its performance features, the BFU520WX is also highly power efficient and features a low thermal resistance. This ensures that the transistor is able to dissipate large amount of heat without causing excessive temperature build up.The BFU520WX is an ideal choice for applications that require high speed, low power consumption, low noise, and improved linearity. Its high performance-to-cost ratio makes it the perfect choice for RF applications. The device is also highly power efficient and offers great thermal stability, making it ideal for portable applications.

The specific data is subject to PDF, and the above content is for reference

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