Allicdata Part #: | BFU550AVL-ND |
Manufacturer Part#: |
BFU550AVL |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS RF NPN 12V 50MA TO-236AB |
More Detail: | RF Transistor NPN 12V 50mA 11GHz 450mW Surface Mou... |
DataSheet: | BFU550AVL Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.04334 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 11GHz |
Noise Figure (dB Typ @ f): | 1.4dB @ 1.8GHz |
Gain: | 12dB |
Power - Max: | 450mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 15mA, 8V |
Current - Collector (Ic) (Max): | 50mA |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Base Part Number: | BFU550 |
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The BFU550AVL Transistor is a device used in RF applications. It is part of the RF Transistor family, also known as Bipolar Junction Transistors (BJTs). These transistors are used to amplify and switch signals of higher frequency range and require very low noise circuit design. This device uses two types of transistors: the NPN and PNP.The NPN transistor of the BFU550AVL is configured as a common collector and the PNP transistor is configured as a common base. The collector of the NPN transistor is coupled with the base of the PNP transistor, which enables the device to perform a switching action. This configuration also minimizes the insertion losses and provides a low voltage drop across the device.The working principle of the BFU550AVL is as follows. When the input signal is applied to the base of the NPN transistor, the current flow increases and causes the transistor to become forward biased. This in turn causes ground potential to be applied to the base of the PNP transistor, thus causing the PNP transistor to become reversed biased.When the input signal is removed, the base of the NPN transistor goes back to ground potential, therefore the PNP transistor is now forward biased and current flows through the collector of the PNP transistor, thus allowing the device to switch off.The BFU550AVL device is used in RF applications such as communication systems, analog signal generation and wireless charging. The advantages of using this transistor include low power consumption and high frequency response.The BFU550AVL transistor can also be used in RF oscillator and amplifier circuits. It has been designed to provide high output power, wideband response and reduced distortion. The device can operate in Class A or B operation and can handle both signal and power applications. Other features of this device include low power consumption, high gain and low noise.The BFU550AVL device is also widely used in AF applications such as loudspeakers and headphones, where it is used to produce high sound quality with low distortion. The device has been designed to provide high power output with low power consumption, wide frequency response and reduced distortion.In conclusion, the BFU550AVL transistors is a device used in RF applications. It is part of the RF Transistor family, also known as Bipolar Junction Transistors (BJTs). This device is used to amplify and switch signals of higher frequency range and require very low noise circuit design. The advantages of using this device include low power consumption, high frequency response and high output power. The BFU550AVL device is also widely used in AF applications such as loudspeakers and headphones, where it is used to produce high sound quality with low distortion.
The specific data is subject to PDF, and the above content is for reference
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