BFU580QX Discrete Semiconductor Products

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The BFU580QX is a bipolar Transistor developed specifically for appplications in radio frequency (RF). This RF transistor was developed and manufactured by Freescale Semiconductor, which is based in Austin Texas. The BFU580QX is mainly used in applications such as broadcast transmitters and receiver amplifiers.

General Features

The BFU580QX is a bipolar RF Transistor has various key features. These include maximum current gain of 10 dB, maximum collector dissipation of 700 mW and a minimum collector-emitter voltage of 18 V. It also has low operating voltage and power consumption. In addition, the BFU580QX offers greater immunity to noise and reduced harmonic distortion, making it ideal for use in broadcast applications. The transistor also has an orderable part number of BFU580QX-E2-08, which refers to its thermal resistance.

Typical Applications

The BFU580QX is commonly used in applications such as receivers and broadcast transmitters. It is also used in radio frequency (RF) applications, such as television broadcast receive amplifiers, cellular radio, FM radio receive amplifiers, low power radio systems and broadband radio. In addition, the transistor is suitable for use in a range of RF amplifiers, such as discrete circuits, pre-amplifiers, power amplifiers and low noise amplifiers.

Working Principle

The BFU580QX works by using a transistor circuit to amplify and modulate RF signals. This type of amplifier uses an input signal, which is modulated by the transistor’s bias conditions, to provide an amplified output. By controlling the bias conditions of the transistor, and by supplying an appropriate input signal, an amplified output is achieved. In addition, the output signal can also be modulated and controlled by the bias conditions of the transistor. This allows for the output signal to be tailored to the requirements of the application.

The BFU580QX is an NPN bipolar transistor, which uses a pair of semiconductor diodes as its active element. These diodes are responsible for controlling the flow of current through the transistor. By controlling the bias conditions of the diodes, the amplifier will be able to function according to the desired input and output signals. The transistor’s internal circuitry also helps to reduce harmonic distortion and noise in the output signal, making it ideal for broadcasting applications.

Conclusion

The BFU580QX is a bipolar RF Transistor developed specifically for applications in RF amplifiers and transmitters. It is suitable for use in a range of applications such as receive amplifiers, broadcast transmitters and low power radio systems. The transistor offers a maximum current gain of 10 dB, maximum collector dissipation of 700 mW and a minimum collector-emitter voltage of 18V. The transistor works by using a transistor circuit to amplify and modulate RF signals.

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