BLF6G05LS-200RN:11

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	460MHz ~ 470MHz
Gain:	24dB
Voltage - Test:	28V
Current Rating:	49A
Noise Figure:	--
Current - Test:	1.4A
Power - Output:	40W
Voltage - Rated:	65V
Package / Case:	SOT-502B
Supplier Device Package:	LDMOST

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BLF6G05LS-200RN:11 is a Power Field Effect Transistor (FET) developed by Monolithic RF company. It is a reliable and cost-effective solution for high power applications with its superior performance. The BLF6G05LS-200RN:11 has a low on-resistance of < 0.2 Ohms and a power rating of up to 20W. It is a matched device with excellent gain and low noise characteristics.The BLF6G05LS-200RN:11 is typically used in power amplifiers and other high-power radio-frequency (RF) circuits. It is suitable for applications in the 1950 to 6500MHz frequency range and operates in Class AB linear applications. The FET is also used for switching applications with up to 12.5V of drain bias. The BLF6G05LS-200RN:11 operates on the principle of source follower. It is composed of a source region, a drain region, and a channel that connects the two. A voltage is applied to the gate that establishes a current between the source and the drain. The gate voltage is controlling the amount of current flowing between these two regions. This current establishes an electric field across the channel that modulates the flow of electrons.The source follower provides an output signal equal or nearly equal to the input signal applied to the gate. This is useful in applications such as amplifiers, regenerative receivers, and oscillators. It is also suitable for computing applications such as analog-to-digital converters and interface logic.The BLF6G05LS-200RN:11 is a reliable and cost-effective solution for high power applications. It has a low on-resistance of < 0.2 Ohms and a power rating of up to 20W. It is suitable for applications in the 1950 to 6500MHz frequency range and operates in Class AB linear applications. It is also used for switching applications with up to 12.5V of drain bias. The device operates on the principle of source follower, with the gate voltage controlling the amount of current flowing between the source and the drain. It is useful in a variety of applications such as amplifiers, regenerative receivers, oscillators, and computing applications such as analog-to-digital converters and interface logic.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description