BLF6G10-45,135

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	922.5MHz ~ 957.5MHz
Gain:	22.5dB
Voltage - Test:	28V
Current Rating:	13A
Noise Figure:	--
Current - Test:	350mA
Power - Output:	1W
Voltage - Rated:	65V
Package / Case:	SOT-608A
Supplier Device Package:	CDFM2
Base Part Number:	BLF6G10

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BLF6G10-45,135 application field and working principle

The BLF6G10-45,135 is a high performance RF amplifier transistor often used in broadcast and radar applications. It is a radio frequency (RF) transistor which belongs to the group of FETs, MOSFETs - RF transistors. This transistor was developed for the purpose of providing high linear power gain and providing superior stability for a wide range of applications.

Overview

The BLF6G10-45,135 is a high performance RF amplifier transistor typically used in broadcast and radar applications. It is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) designed for use in radio frequency (RF) applications. The device consists of a n-channel enhancement-mode transistor design which offers high linear power gain, superior stability, and high voltage breakdown capability. In addition, the transistor provides excellent thermal performance, making it well suited for applications that require high power handling.

Application Field

The BLF6G10-45,135 is typically used in broadcast and radar applications. It is ideal for amplifying high frequency signals in these applications. It is suitable for radio and television amplifiers, antennas, and antennas for airborne platforms. The transistor is also used in aviation and other areas where high performance amplifiers are needed. Additionally, it can also be used in a wide range of frequency converters such as triple converter amplifiers or pulse-width modulated amplifiers.

Working Principle

The BLF6G10-45,135 employs a n-channel enhancement-mode transistor design. This type of design is the most commonly used for RF applications. In this design, when a voltage is applied to the gate of the transistor, the gate attracts electrons from the n-channel layer. This creates an electric field, or so-called "inversion layer" that enhances the current flow from the source to the drain. This allows for high power gain and stability. Moreover, due to its high voltage breakdown, the transistor is able to provide superior thermal performance compared to other FETs. This ensures a higher power handling capacity, making it well suited for applications that require extended operation under high power levels.

Conclusion

The BLF6G10-45,135 is a high performance RF amplifier transistor that belongs to the group of FETs, MOSFETs - RF transistors. It is typically used in broadcast and radar applications due to its superior linear power gain and superior stability compared to other transistors. The device also provides excellent thermal performance, ensuring higher power handling capacity. Thus, the BLF6G10-45,135 is an ideal choice for a wide range of applications that require high power amplification capability.

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