BLF6G27LS-40P,112

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	LDMOS (Dual), Common Source
Frequency:	2.5GHz ~ 2.7GHz
Gain:	17.5dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	450mA
Power - Output:	12W
Voltage - Rated:	65V
Package / Case:	SOT-1121B
Supplier Device Package:	LDMOST
Base Part Number:	BLF6G27

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BLF6G27LS-40P,112 Application Field and Working Principle

Introduction

The BLF6G27LS-40P,112 is a high-performance rf field-effect transistor (FET) commonly used in high-frequency applications such as power amplifiers and amplifier modules. It is a type of MOSFET and a popular choice for its high frequency, high efficiency and excellent reliability.

Features

The device is equipped with several special characteristics that make it stand out from the rest. Some of these features are:* High gain-bandwidth product* High-power dissipation* Excellent input/output isolation* High voltage breakdown* Very low noise figure* Low thermal resistance* Extremely wide operating temperature range

Application field

The BLF6G27LS-40P,112 can be used in a variety of applications. Common applications include FM amplifiers, transceiver amplifiers, television signal amplifiers, mobile phone amplifiers, satellite communication systems, and high-frequency industrial devices.

Working principle

The BLF6G27LS-40P,112 is based on a MOSFET structure. It works on the principle of field-effect transistor technology, wherein two terminals in an electric field, namely the gate and the source, interact with a voltage being applied on a third terminal, the drain, to control current flow from the source to the drain.When a voltage is applied to the gate, an electric field is created that induces a channel in the underlying substrate and allows current to flow from source to drain. This is known as enhancement mode, and it is the conventional operating mode for most FETs.The BLF6G27LS-40P,112 can also be operated in depletion mode, where a reverse bias voltage is applied to the gate to create a depletion layer that prevents current flow. This can be used to adjust parameter values such as capacitance.

Performance

The BLF6G27LS-40P,112 has a gain bandwidth product of 27 dBm, a power dissipation of 26 watts, an input/output isolator of 58 dB, and a voltage breakdown of 80 v. It has a noise figure of 1.6 dB and a thermal resistance of 7.5 C/W. It operates over an extended temperature range of -55 to +150 degrees Celsius.

Conclusion

The BLF6G27LS-40P,112 is a high-performance rf FET commonly used in high-frequency applications. It is equipped with several advantageous features, such as a high gain bandwidth product, high-power dissipation, high voltage breakdown, and a very low noise figure. It can be used in applications such as FM amplifiers, transceiver amplifiers, television signal amplifiers, and mobile phone amplifiers. It works on the principle of field-effect transistor technology, wherein two terminals in an electric field interact with a voltage being applied on a third terminal to control current flow from the source to the drain. It offers excellent performance, with a gain bandwidth product of 27 dBm and a thermal resistance of 7.5 C/W.

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