BLF6G38LS-50,118

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BLF6G38LS-50,118 is a subminiature RF transistor with N-Channer enhancement mode. It is intended as a general purpose device for low voltage/low current amplifier in a wide range of applications.

The BLF6G38LS-50,118 provides high input attenuation, excellent linearity, and steady output power. It is manufactured in an advanced process with a double poly-silicon gate and an epitaxial lateral structure giving excellent performance.

The combination of small size, low operating voltage, and high gain makes this transistor suitable for use in a wide range of low noise, low power amplifier applications.

Application Fields

The BLF6G38LS-50,118 is ideal for low voltage, low current amplifier circuits. It is suitable for use in a wide range of applications including VHF/UHF personal and handheld communications systems, access control, security systems, and car audio systems.

The BLF6G38LS-50,118 is also commonly used in radio receivers, transceivers, and radio link transceivers, as well as in Wi-Fi, ZigBee, and Bluetooth applications.

Working Principle

The BLF6G38LS-50,118 is a N-channel enhancement mode RF power transistor with a maximum drain-source voltage of 60V. It consists of two N-channel enhancement silicon junction field-effect transistors (FETs) which operate in a common source configuration.

The two N-channel FETs provide an input impedance of as low as 0.14 ohm and a bandwidth of as high as 5 GHz. The BLF6G38LS-50,118 is designed to have an optimal switching performance, provide high levels of intermodulation distortion (IMD) suppression, and offer a high level of efficiency without the need for gate-level matching.

A voltage applied to the gate of the transistor changes the width, and thus the resistance, of the conducting channel between the source and the drain of the transistor. This change in resistance between the source and the drain is what allows current to flow, allowing the transistor to be used as an amplifier or switch.

The BLF6G38LS-50,118 is designed to offer excellent reliability and performance, providing excellent supply noise and temperature stability. The device is rated with a power dissipation of 500 mW, an output power of 30 dBm, and a gain of 16 dB.

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