BLF6G15LS-40RN,112 Allicdata Electronics
Allicdata Part #:

568-12826-ND

Manufacturer Part#:

BLF6G15LS-40RN,112

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 22.5DB SOT1135B
More Detail: RF Mosfet LDMOS 28V 375mA 1.48GHz ~ 1.51GHz 22.5dB...
DataSheet: BLF6G15LS-40RN,112 datasheetBLF6G15LS-40RN,112 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 1.48GHz ~ 1.51GHz
Gain: 22.5dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 375mA
Power - Output: 2.5W
Voltage - Rated: 65V
Package / Case: SOT-1135B
Supplier Device Package: SOT1135B
Base Part Number: BLF6G15
Description

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The BLF6G15LS-40RN,112 is a type of MOSFET transistor mainly used in its RF application fields due to its high frequency performance, large bandwidth, low power consumption and wide range of linear amplification.

MOSFET transistors are a type of field effect transistor (FET) that utilizes metal oxide semiconductor technology, as opposed to traditional junction technology used in other types of transistors. This improved construction allows the device to handle larger powers and greater frequency ranges without generating heat, so it can be a great option for applications that require high voltage operation.

As stated, the BLF6G15LS-40RN,112 is mainly used in its RF application fields, which are products or systems that transmit or receive wireless signals on the frequency range of 30 KH to 300 GHZ. This includes high-powered devices such as wireless internet routers and cell phone base stations, as well as applications in scientific, medical, and military areas.

In its working principle, the BLF6G15LS-40RN,112 is a N-channel enhancement-mode metal oxide semiconductor field effect transistor (MOSFET). The device utilizes three metal electrodes, the source, the gate, and the drain, to create a flow of electricity between them. Applying voltage to the gate electrode changes the device\'s resistance level, allowing current to flow through it in a linear fashion. This makes it an ideal choice for RF applications, since its power dissipation, linearity, and frequency range are dependent on its effective gate resistance.

The BLF6G15LS-40RN,112 has several advantages over other types of transistors for RF applications. Its low on-resistance, low gate-charge, and high transconductance allow it to operate at higher frequencies without generating excessive heat. Additionally, the device can be easily integrated into PCBs, making it a great choice for designs needing high power capabilities while still maintaining a small form factor.

In conclusion, the BLF6G15LS-40RN,112 is a type of MOSFET transistor that is mainly suitable for its RF application fields due to its high frequency performance, large bandwidth, low power consumption and wide range of linear amplification. It is a great choice for designs requiring high power capabilities, easy integration onto PCBs, and a small form factor.

The specific data is subject to PDF, and the above content is for reference

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