Allicdata Part #: | BLF6G10LS-200RN,11-ND |
Manufacturer Part#: |
BLF6G10LS-200RN,11 |
Price: | $ 60.17 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 20DB SOT502B |
More Detail: | RF Mosfet LDMOS 28V 1.4A 871.5MHz ~ 891.5MHz 20dB ... |
DataSheet: | BLF6G10LS-200RN,11 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 54.69690 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 871.5MHz ~ 891.5MHz |
Gain: | 20dB |
Voltage - Test: | 28V |
Current Rating: | 49A |
Noise Figure: | -- |
Current - Test: | 1.4A |
Power - Output: | 40W |
Voltage - Rated: | 65V |
Package / Case: | SOT-502B |
Supplier Device Package: | SOT502B |
Base Part Number: | BLF6G10 |
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BLF6G10LS-200RN is a type of Transistors - Field Effect Transistors (FETs), more specifically Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) specifically designed for use in Radio Frequency (RF) applications. The working principle of this type of FET is based on the principle that, an electric field due to a gate voltage is induced in an insulated "gate" which controls the conductive path between the source and the drain. This gate voltage can be controlled by the designer to control the type of current and voltage that can pass through the transistor.
Transistors are commonly used in digital and analog circuits for numerous applications, such as in signal amplifiers, power amplifiers, programmable logic devices and various kinds of control circuits. FETs in particular are advantageous for amplification purposes, since they can reproduce a signal with a low distortion and low noise. In addition, MOSFETs are better suited for high-frequency operation since they switch quickly.
BLF6G10LS-200RN is a type of N channel enhancement mode MOSFET with an extremely wide operating frequency range (500 MHz - 10 GHz). The maximum drain current is 200 A, the drain-source breakdown voltage is 10 V and the gate-source voltage is 5 V. The device is made of a silicon die so it can handle high temperatures (up to 175°C) and it is also environmentally friendly, requiring no external cooling. Some of the most typical applications of the BLF6G10LS-200RN include low noise amplifiers, RF switches, RF mixers and signal modulators.
The most common application of the BLF6G10LS-200RN is as a low noise amplifier (LNA). The signal is filtered and amplified by the MOSFET to provide maximum signal strength within the specified frequency range. The MOSFET can also act as an RF switch, controlling the flow of current and voltage to a specific load device. By controlling the gate voltage, the RF switch can either be turned on or off. Another application of the BLF6G10LS-200RN is as an RF mixer, where two signals of different frequencies are combined and converted into a single signal with a desired frequency. This can be used in radio repeaters, and other radio-controlled systems. Finally, the BLF6G10LS-200RN can also be used as a signal modulator, where a signal is modulated by another signal, resulting in a higher frequency signal.
In conclusion, the BLF6G10LS-200RN is an N-channel enhancement mode MOSFET specifically designed for use in RF applications. The device can be used in a variety of applications such as low noise amplifiers, RF switches, RF mixers and signal modulators. Its wide operating frequency range and high power handling capabilities make it a versatile and reliable choice for any RF application.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BLF6G15LS-40RN,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 22.5DB S... |
BLF6G13L-250P,112 | Ampleon USA ... | 142.84 $ | 98 | RF FET LDMOS 100V 17DB SO... |
BLF6G27-10G,118 | Ampleon USA ... | 21.89 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
BLF6G27-10G,112 | Ampleon USA ... | 27.01 $ | 210 | RF FET LDMOS 65V 19DB SOT... |
BLF6G10LS-200RN,11 | Ampleon USA ... | 60.17 $ | 1000 | RF FET LDMOS 65V 20DB SOT... |
BLF6G10LS-200RN:11 | Ampleon USA ... | 70.13 $ | 97 | RF FET LDMOS 65V 20DB SOT... |
BLF640U | Ampleon USA ... | 27.01 $ | 233 | RF FET LDMOS 65V 18.5DB S... |
BLF642,112 | Ampleon USA ... | 46.57 $ | 137 | RF FET LDMOS 65V 19DB SOT... |
BLF645,112 | Ampleon USA ... | 102.52 $ | 1442 | RF FET LDMOS 65V 16DB SOT... |
BLF6G13LS-250PGJ | Ampleon USA ... | 134.62 $ | 1000 | RF FET LDMOS 100V 17DB SO... |
BLF6G38-10G,118 | Ampleon USA ... | 23.7 $ | 100 | RF FET LDMOS 65V 14DB SOT... |
BLF6G38-10G,112 | Ampleon USA ... | 23.7 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
BLF6G22LS-40P,118 | Ampleon USA ... | 40.19 $ | 100 | RF FET LDMOS 65V 19DB SOT... |
BLF644PU | Ampleon USA ... | 103.4 $ | 57 | RF FET LDMOS 65V 23.5DB S... |
BLF647PS,112 | Ampleon USA ... | 149.83 $ | 19 | RF FET LDMOS 65V 17DB SOT... |
BLF6G38S-25,112 | Ampleon USA ... | 53.28 $ | 56 | RF FET LDMOS 65V 15DB SOT... |
BLF6G38LS-50,118 | Ampleon USA ... | 56.11 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
BLF6G38LS-50,112 | Ampleon USA ... | 65.39 $ | 85 | RF FET LDMOS 65V 14DB SOT... |
BLF6G21-10G,135 | Ampleon USA ... | 19.62 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF6G21-10G,112 | Ampleon USA ... | 26.4 $ | 604 | RF FET LDMOS 65V 18.5DB S... |
BLF647P,112 | Ampleon USA ... | 149.83 $ | 2 | RF FET LDMOS 65V 18DB SOT... |
BLF6G27LS-40P,112 | Ampleon USA ... | 56.33 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G13LS-250P,112 | Ampleon USA ... | 142.84 $ | 1000 | RF FET LDMOS 100V 17DB SO... |
BLF6G10L-40BRN,112 | Ampleon USA ... | 35.75 $ | 1000 | RF FET LDMOS 65V 23DB SOT... |
BLF6G22LS-40P,112 | Ampleon USA ... | 43.38 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
BLF6G38S-25,118 | Ampleon USA ... | 45.62 $ | 1000 | RF FET LDMOS 65V 15DB SOT... |
BLF6G27LS-40P,118 | Ampleon USA ... | 48.23 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G27LS-40PGJ | Ampleon USA ... | 48.23 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G27L-50BN,118 | Ampleon USA ... | 50.17 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLF6G27L-50BN,112 | Ampleon USA ... | 53.94 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLF6H10LS-160,118 | Ampleon USA ... | 57.22 $ | 1000 | RF FET LDMOS 104V 20DB SO... |
BLF6H10LS-160,112 | Ampleon USA ... | 62.93 $ | 1000 | RF FET LDMOS 104V 20DB SO... |
BLF6G10L-260PBM,11 | Ampleon USA ... | 78.3 $ | 1000 | RF FET LDMOS 65V SOT1110A... |
BLF6G15LS-250PBRN: | Ampleon USA ... | 88.95 $ | 1000 | RF FET 65V 18.5DB SOT1110... |
BLF6G15LS-250PBRN, | Ampleon USA ... | 93.7 $ | 1000 | RF FET 65V 18.5DB SOT1110... |
BLF647PSJ | Ampleon USA ... | 136.11 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G15L-500H,112 | Ampleon USA ... | 243.31 $ | 1000 | RF FET LDMOS 100V 16DB SO... |
BLF6G15LS-500H,112 | Ampleon USA ... | 243.31 $ | 1000 | RF FET LDMOS 100V 16DB SO... |
BLF6G27-45,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF6G10-45,135 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 22.5DB S... |
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