BLF6G20LS-140,112

BLF6G20LS-140,112 Application Field and Working Principle

BLF6G20LS-140,112 is a RF FET widely used in radio transmitters, radio receivers, high frequency amplifiers and other RF and microwave applications. This FET is from Mitsubishi’s Electric, and uses a GaN-on-Si process to create high power and high frequency components, delivering an ability to supply 20 Watts at a single frequency of 140MHz in the Ku-Band.

Application Field

This RF FET enables considerable design flexibility, as it offers wide-bandwidth performance within a 2.45-2.47 GHz range, with a power-added efficiency (PAE) greater than 50 percent in that same bandwidth range. Its excellent gain features make it ideal for use as a high power amplifier (HPA) in applications such as VSAT, microwave radio, and satellite communications. The capability of operating above 8.5GHz gives it a competitive advantage in markets such as 5G cellular and microwave backhaul.

The part features differential input/output ports and highly efficient active bias. Integrated gate limiters also provide protection from damage due to high reflected power.

Working Principle

RF FETs rely on the same principles as conventional BJT (Bipolar Junction Transistor). An electron “sandwich” three terminals: the collector, the base, and the emitter. A voltage applied to the base controls the current that can flow from the collector to the emitter.

RF FETs use a variation of BJT called a MESFET, which stands for metal semiconductor field effect transistor. The design of an electronic sandwich differs between a BJT and a MESFET. The main difference lies in the structure of the third terminal, which is replaced by a metal surface that becomes a barrier to current flow when a voltage is applied.

The BLF6G20LS-140,112 FET has a unique structure and materials for its structure, including a gallium nitride-on-silicon substrate that serves as the base. This substrate is both electrically and thermally conductive, so it can dissipate heat generated from high current (high power) applications. The input impedance of the RF FET is given by its "gate capacitance" which is adjustable. By applying a voltage to the gate, an electric field is created across the base and between the source and drain that can be used to control the current flowing through the device.

Overall, the BLF6G20LS-140,112 RF FET has an improved gate capacitance, which when combined with its high power output capabilities and low harmonic distortion, make it an attractive choice for high frequency applications.