Allicdata Part #: | 568-8645-ND |
Manufacturer Part#: |
BLF6G20LS-75,112 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 19DB SOT502B |
More Detail: | RF Mosfet LDMOS 28V 550mA 1.93GHz ~ 1.99GHz 19dB 2... |
DataSheet: | BLF6G20LS-75,112 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 1.93GHz ~ 1.99GHz |
Gain: | 19dB |
Voltage - Test: | 28V |
Current Rating: | 18A |
Noise Figure: | -- |
Current - Test: | 550mA |
Power - Output: | 29.5W |
Voltage - Rated: | 65V |
Package / Case: | SOT-502B |
Supplier Device Package: | SOT502B |
Base Part Number: | BLF6G20 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BLF6G20LS-75,112 is a device using its insulated-gate field effect transistor (IGFET) to allow or stop the flow of current between the drain and the source, making it a ‘switching’ component. This means that an input signal that is sent to the gate is mirrored in an output at the drain or source. So, while this component looks like a transistor, its internal structure and operation differs significantly.
A benefit of this component is its enhanced performance over conventional field effect transistors, with higher speed and greater power dissipation in a comparable area. This component is designed to extend to higher frequencies and higher power requirements, so it is well-suited for applications such as amplifiers, attenuators, and switched power supplies.
The BLF6G20LS-75,112 is a Multi-Gate Advanced Lateral Power field-effect transistor process. It combines advanced design, manufacturing and packaging processes. Its design for improved operation and integration of timing, detect, and control functions at high frequency and low power consumption simplifies power management system requirement. Overall, this component has been developed to provide a cost effective solution for Switching and amplifier applications from DC to 52GHz.
The working principle of this component is based upon the notion of channel resistance. When a voltage is applied at the gate of the component, the channel resistance decreases or increases. This resistance change controls the current passing through the component between the drain and source, thus the component operates in the FD (on) or FS (off) mode. When the component is in FD, then the current flows between the drain and source, and when in FS, the current is limited by the off-state resistance of the component.
The BLF6G20LS-75,112 has wide range of applications. It is suitable for use in a variety of switching and amplifier specifications, from DC to 52GHz. This component is ideal for applications that involve high speed and low power, including switching power supply, attenuators, and amplifiers. This component is also suitable for use in high voltage operation, such as those seen in high-power RF applications. Finally, this component is robust and provides reliable operation even in harsh environmental conditions.
In conclusion, the BLF6G20LS-75,112 is a versatile component ideal for high-frequency and high-power applications. It offers great performance, high speed and low power, improving the efficiency and reliability of a variety of applications. It’s designed to make switching and amplifier operations easier and more reliable, with comprehensive integration of its functions. Therefore, this component is ideal for use in a wide range of applications, ranging from a switching power supply to high-power RF applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BLF6G15LS-40RN,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 22.5DB S... |
BLF6G13L-250P,112 | Ampleon USA ... | 142.84 $ | 98 | RF FET LDMOS 100V 17DB SO... |
BLF6G27-10G,118 | Ampleon USA ... | 21.89 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
BLF6G27-10G,112 | Ampleon USA ... | 27.01 $ | 210 | RF FET LDMOS 65V 19DB SOT... |
BLF6G10LS-200RN,11 | Ampleon USA ... | 60.17 $ | 1000 | RF FET LDMOS 65V 20DB SOT... |
BLF6G10LS-200RN:11 | Ampleon USA ... | 70.13 $ | 97 | RF FET LDMOS 65V 20DB SOT... |
BLF640U | Ampleon USA ... | 27.01 $ | 233 | RF FET LDMOS 65V 18.5DB S... |
BLF642,112 | Ampleon USA ... | 46.57 $ | 137 | RF FET LDMOS 65V 19DB SOT... |
BLF645,112 | Ampleon USA ... | 102.52 $ | 1442 | RF FET LDMOS 65V 16DB SOT... |
BLF6G13LS-250PGJ | Ampleon USA ... | 134.62 $ | 1000 | RF FET LDMOS 100V 17DB SO... |
BLF6G38-10G,118 | Ampleon USA ... | 23.7 $ | 100 | RF FET LDMOS 65V 14DB SOT... |
BLF6G38-10G,112 | Ampleon USA ... | 23.7 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
BLF6G22LS-40P,118 | Ampleon USA ... | 40.19 $ | 100 | RF FET LDMOS 65V 19DB SOT... |
BLF644PU | Ampleon USA ... | 103.4 $ | 57 | RF FET LDMOS 65V 23.5DB S... |
BLF647PS,112 | Ampleon USA ... | 149.83 $ | 19 | RF FET LDMOS 65V 17DB SOT... |
BLF6G38S-25,112 | Ampleon USA ... | 53.28 $ | 56 | RF FET LDMOS 65V 15DB SOT... |
BLF6G38LS-50,118 | Ampleon USA ... | 56.11 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
BLF6G38LS-50,112 | Ampleon USA ... | 65.39 $ | 85 | RF FET LDMOS 65V 14DB SOT... |
BLF6G21-10G,135 | Ampleon USA ... | 19.62 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF6G21-10G,112 | Ampleon USA ... | 26.4 $ | 604 | RF FET LDMOS 65V 18.5DB S... |
BLF647P,112 | Ampleon USA ... | 149.83 $ | 2 | RF FET LDMOS 65V 18DB SOT... |
BLF6G27LS-40P,112 | Ampleon USA ... | 56.33 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G13LS-250P,112 | Ampleon USA ... | 142.84 $ | 1000 | RF FET LDMOS 100V 17DB SO... |
BLF6G10L-40BRN,112 | Ampleon USA ... | 35.75 $ | 1000 | RF FET LDMOS 65V 23DB SOT... |
BLF6G22LS-40P,112 | Ampleon USA ... | 43.38 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
BLF6G38S-25,118 | Ampleon USA ... | 45.62 $ | 1000 | RF FET LDMOS 65V 15DB SOT... |
BLF6G27LS-40P,118 | Ampleon USA ... | 48.23 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G27LS-40PGJ | Ampleon USA ... | 48.23 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G27L-50BN,118 | Ampleon USA ... | 50.17 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLF6G27L-50BN,112 | Ampleon USA ... | 53.94 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLF6H10LS-160,118 | Ampleon USA ... | 57.22 $ | 1000 | RF FET LDMOS 104V 20DB SO... |
BLF6H10LS-160,112 | Ampleon USA ... | 62.93 $ | 1000 | RF FET LDMOS 104V 20DB SO... |
BLF6G10L-260PBM,11 | Ampleon USA ... | 78.3 $ | 1000 | RF FET LDMOS 65V SOT1110A... |
BLF6G15LS-250PBRN: | Ampleon USA ... | 88.95 $ | 1000 | RF FET 65V 18.5DB SOT1110... |
BLF6G15LS-250PBRN, | Ampleon USA ... | 93.7 $ | 1000 | RF FET 65V 18.5DB SOT1110... |
BLF647PSJ | Ampleon USA ... | 136.11 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G15L-500H,112 | Ampleon USA ... | 243.31 $ | 1000 | RF FET LDMOS 100V 16DB SO... |
BLF6G15LS-500H,112 | Ampleon USA ... | 243.31 $ | 1000 | RF FET LDMOS 100V 16DB SO... |
BLF6G27-45,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF6G10-45,135 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 22.5DB S... |
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