BLF6G22-180PN,112 Allicdata Electronics
Allicdata Part #:

BLF6G22-180PN,112-ND

Manufacturer Part#:

BLF6G22-180PN,112

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 17DB SOT539A
More Detail: RF Mosfet LDMOS (Dual), Common Source 32V 1.6A 2.1...
DataSheet: BLF6G22-180PN,112 datasheetBLF6G22-180PN,112 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Transistor Type: LDMOS (Dual), Common Source
Frequency: 2.11GHz ~ 2.17GHz
Gain: 17.5dB
Voltage - Test: 32V
Current Rating: --
Noise Figure: --
Current - Test: 1.6A
Power - Output: 50W
Voltage - Rated: 65V
Package / Case: SOT539A
Supplier Device Package: SOT539A
Base Part Number: BLF6G22
Description

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BLF6G22-180PN,112 is a type of a transistor typically used in radio frequency (RF) applications. This is because its working principle lies in the fact that it is a metal-oxide-semiconductor field-effect transistors (MOSFETs), which are known for their excellent RF performance capabilities.In particular, the BLF6G22-180PN, 112 is an n-channel MOSFET type. This means it is used for switching or amplifying signals in both narrowband and broadband applications. It should also be noted that this type of transistor also provides some advantages in terms of reach and efficiency.The BLF6G22-180PN, 112 is used in a wide range of applications, with some of the more common examples being cellular base stations, cable TV, and Wi-Fi networks. It can also be used in some applications that require high-frequency signals, such as radar systems, satellite television systems, and satellite communications.In terms of its working principle, the BLF6G22-180PN, 112 uses a two-terminal MOSFET construction. It is composed of two electrodes that make up the gate and source of the MOSFET. When a voltage is applied to the gate, it will open up the MOSFET and allow the current to flow from the source to the drain. This operating principle makes the BLF6G22-180PN, 112 suitable for controlling and amplifying high-frequency signals.Moreover, the BLF6G22-180PN, 112 is capable of handling a high current and power levels, which makes it suitable for many RF applications. This is because it has a low resistance and also a low capacitance, which helps to reduce signal loss and noise.Finally, the BLF6G22-180PN, 112 is a reliable and effective device for many RF applications because it provides good performance at a competitive price. This is why it is frequently used in the industry, and why manufacturers recommend it for any type of RF application.All in all, the BLF6G22-180PN, 112 is an excellent choice for many RF applications because of its two-terminal MOSFET construction, its high current and power levels, its low resistance and capacitance, and its competitive price. It is also known for providing excellent RF performance and is used in a wide range of applications, including cellular base stations, cable TV, Wi-Fi networks, and radar systems. With its combination of features and benefits, the BLF6G22-180PN,112 is an excellent choice for RF applications.

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