BLF6G22-45,112

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	2.11GHz ~ 2.17GHz
Gain:	18.5dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	405mA
Power - Output:	2.5W
Voltage - Rated:	65V
Package / Case:	SOT-608A
Supplier Device Package:	CDFM2
Base Part Number:	BLF6G22

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BLF6G22-45,112 Application Field and Working Principle

BLF6G22-45,112 is one type of transistor, categorized under transistors-field effect transistors (FETs)-radio frequency (RF). The BLF6G22-45,112 is a enhancement mode field effect transistor (FET) designed specifically for use in low voltage applications. It is commonly used in low noise amplifiers, low noise oscillators, and other applications requiring low noise and low power consumption.The BLF6G22-45,112 is constructed using the latest advancements in semiconductor manufacturing technologies, allowing for improved efficiency and performance. The transistor is designed with a dielectric layer between the gate, drain and source regions, allowing for higher breakdown voltages and improved RF linearity. The large gate-to-drain distance of this FET also improves the transistor’s immunity to electrostatic discharges (ESD).The BLF6G22-45,112 is an enhancement mode field effect transistor, which means that the gate voltage must be positive with respect to the source voltage in order to turn the transistor "on". This type of transistor is well-suited for use in digital logic, where the logic levels are known to be well above or below the "threshold" voltage needed to turn the device on.The working principle of the BLF6G22-45,112 can be broken down into three simple steps. First, when the gate voltage is applied, it causes an electric field which bends the conductive electrons in the source region towards the gate and drain regions. This leaves a space between the source and the gate, which is filled by electrons from the drain. Second, the effect of the electric field continues until the source is fully depleted, leaving a space between the source and the gate. Finally, when voltage is applied to the drain, current can flow from the source to the drain.The BLF6G22-45,112 has been designed for use in a variety of applications including low noise oscillators, low noise amplifiers, and other applications requiring low noise and low power consumption. The transistor’s design characteristics make it ideal for these types of applications, as it offers improved RF linearity, high breakdown voltages, and improved immunity to electrostatic discharges making it a highly reliable component. The BLF6G22-45,112 is also easy to use and can be used in a variety of design configurations, making it a versatile component for any number of projects.

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