Allicdata Part #: | BLF6G22LS-100,118-ND |
Manufacturer Part#: |
BLF6G22LS-100,118 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 18.2DB SOT502B |
More Detail: | RF Mosfet LDMOS 28V 950mA 2.11GHz ~ 2.17GHz 18.2dB... |
DataSheet: | BLF6G22LS-100,118 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2.11GHz ~ 2.17GHz |
Gain: | 18.2dB |
Voltage - Test: | 28V |
Current Rating: | 29A |
Noise Figure: | -- |
Current - Test: | 950mA |
Power - Output: | 25W |
Voltage - Rated: | 65V |
Package / Case: | SOT-502B |
Supplier Device Package: | SOT502B |
Base Part Number: | BLF6G22 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BLF6G22LS-100,118 is a type of transistor, more specifically known as a “Field Effect Transistor”, or FET. FETs are a type of transistor that operates by controlling the electrical field surrounding a gate on the device. This type of transistor is also called a “Metal Oxide Semiconductor Field Effect Transistor”, or MOSFET, due to its construction. BLF6G22LS-100,118 is a further specialized type of FET known as an “RF (Radio Frequency) MOSFET” due to its ability to operate in radio frequency applications. The BLF6G22LS-100,118 has many features and specifications that can be utilized in a variety of applications.
One of the most noteworthy features of the BLF6G22LS-100,118 is its maximum continuous drain current of 23A. This current rating is ideal for power applications, and is one of the highest of its kind in MOSFETs. In addition, this device offers good linearity and a high input impedance, making it perfect for RF amplification and mixing applications. This type of transistor also comes with a low gate capacitance, allowing for faster switching times and improved signal fidelity. Furthermore, the BLF6G22LS-100,118 has a very low input capacitance, which enables it to have very low noise levels when operating at radio frequencies.
These features make the BLF6G22LS-100,118 a great choice for many RF applications, such as RF amplifiers, mixers, signal conditioning, signal switching, and signal generators. When used in RF applications, the transistor is typically operated in either the enhancement or depletion modes. When operating in the enhancement mode, the device acts as a voltage-controlled resistor, allowing for the control of signal strength and amplification. When operating in the depletion mode, the device acts as a current-controlled resistor, allowing for the control of signal impedance.
The working principle of the BLF6G22LS-100,118 is the same regardless of its mode of operation. When an electrical signal is applied to its gate, an electric field is generated around the gate. This electric field modulates the conductivity of the channel between the source and the drain terminals, allowing for a conduction current to flow. The strength of the conduction current is determined by the amount of voltage applied at the gate, as well as the parameters of the device, such as its drain-to-source voltage, drain-to-source resistance, and gate-to-source capacitance. As the gate voltage and other parameters of the device are adjusted, the conduction characteristics of the device can be altered, allowing for a wide range of applications.
The BLF6G22LS-100,118 is a high-performance RF MOSFET that offers excellent performance in a variety of RF applications. Its high available current, low gate capacitance, and low input capacitance make it ideal for RF mixing and signal amplification applications. The device is also versatile, allowing for operation in both the enhancement and depletion modes. Furthermore, its working principle is straightforward and easy to understand, making it a great choice for power and RF applications.
The specific data is subject to PDF, and the above content is for reference
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