BLF6G22LS-75,112

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BLF6G22LS-75,112 is a part of the Transistors - FETs, MOSFETs - RF category. It is a high-power laterally diffused metal-oxide semiconductor field effect transistor (LDMOSFET) designed to be used in radio frequency (RF) power amplifiers. Specifically, the BLF6G22LS-75,112 is designed to be used in RF power amplifiers operating up to 2.5GHz.

This type of transistor is a type of switching device, meaning it can turn thousands of times faster than a bipolar transistor. It uses electrical signals to turn a small electric charge into a large electric current and can be used to amplify or switch electric signals.

The BLF6G22LS-75,112 has a low on-state resistance, low power consumption, and high breakdown voltage. It is used for applications in a variety of amplifiers, including HF, VHF, UHF, and microwave amplifiers. It is also used in transmitters, radio receivers, and other RF signal processing equipment. This makes it a versatile tool for RF signal applications.

The working principle of the BLF6G22LS-75,112 is based on the application of a magnetic field to a junction between n-type and p-type semiconductor material. This creates what is known as an insulation oxide layer, which acts as a current barrier and allows only certain electric charges to pass through. When an electric signal is applied to the transistor, the insulation oxide layer allows current to pass through, allowing the RF signal to be amplified.

By controlling the gate voltage, the transistor can be switched on and off, allowing it to be used as an amplifier or a switch. Another way to control the transistor is to vary the current running through it, which allows for variable current gain. This allows a user to adjust the gain of the amplifier to match the signal level that they are amplifying, creating a high-performance RF amplifier.

The BLF6G22LS-75,112 has a maximum frequency of 2.5GHz, a drain current of 75A, and a maximum drain voltage of 8 volts. Its power output is typically 1.7W, making it an ideal device for low to medium power applications. It is designed to be used at temperatures of -40 to +85 degrees Celsius, making it a reliable device in a wide range of conditions.

In conclusion, the BLF6G22LS-75,112 is a high-power, laterally diffused metal-oxide semiconductor field effect transistor that is designed to be used in RF power amplifiers up to 2.5GHz. It has a low on-state resistance, low power consumption, and high breakdown voltage, making it ideal for use in a variety of RF signal processing applications. The BLF6G22LS-75,112 works by applying a magnetic field to the junction between n-type and p-type material, allowing for current amplification, switching, and adjustable gain.

The specific data is subject to PDF, and the above content is for reference