BLF6G27S-45,112

The BLF6G27S-45,112 is a type of transistor commonly used in radio frequency (RF) applications. It is a silicon N-channel enhancement-mode RF transistor, known as a field-effect transistor (FET). These FETs have a wide range of uses in industries such as radio communication, telecommunications, and RF technology.This specific type of transistor is capable of achieving high power levels with compact size. It is also able to operate over a wide range of operating temperatures. Its maximum operating temperature is 125°C and its minimum operating temperature is -55°C. The wide temperature range makes the BLF6G27S-45,112 suitable for a variety of applications and environments.The most common application of the BLF6G27S-45,112 is in the creation of RF amplifiers. The transistor amplifies the signal received from an antenna and increases its power. This signal is then transmitted through an amplifier and sent to other devices. It is also capable of providing signal gain and increasing the range of an RF signal as it travels through the air.To understand how the BLF6G27S-45,112 works, it is important to understand the basic principles of transistor operation. A transistor consists of a semiconductor material, such as silicon, with three electrical terminals, called the gate, source and drain. When a voltage is applied to the gate terminal, it causes the electric field surrounding the semiconductor to change, allowing electrons to flow from the source to the drain.The BLF6G27S-45,112 transistor uses this principle, but with a few refinements. The gate voltage, along with the drain bias voltage and the gate bias voltage, is used to control the current flow. When the gate voltage is increased, the current flow will also increase. When the gate voltage is decreased, the current flow will decrease. This ability to control the current flow allows the transistor to be used in RF applications, where precisely tuned signals are required.The BLF6G27S-45,112 is well suited for difficult RF applications, including high efficiency power amplifiers. It has low gain, high linearity, low noise figure and low thermal resistance, which makes it an ideal choice for RF applications that require high performance.The BLF6G27S-45,112 is an excellent choice for a variety of RF applications, from low power amplifiers to high power amplifiers. Its versatile design and wide temperature range make it suitable for a variety of environments, from demanding industrial applications to the comfortable home. Its ability to provide high efficiency and low noise figure, as well as its ability to precisely control current flow, make it one of the best transistors for RF applications.

BLF6G15LS-40RN,112	Ampleon USA ...	0.0 $	1000	RF FET LDMOS 65V 22.5DB S...
BLF6G13L-250P,112	Ampleon USA ...	142.84 $	98	RF FET LDMOS 100V 17DB SO...
BLF6G27-10G,118	Ampleon USA ...	21.89 $	1000	RF FET LDMOS 65V 19DB SOT...
BLF6G27-10G,112	Ampleon USA ...	27.01 $	210	RF FET LDMOS 65V 19DB SOT...
BLF6G10LS-200RN,11	Ampleon USA ...	60.17 $	1000	RF FET LDMOS 65V 20DB SOT...
BLF6G10LS-200RN:11	Ampleon USA ...	70.13 $	97	RF FET LDMOS 65V 20DB SOT...
BLF640U	Ampleon USA ...	27.01 $	233	RF FET LDMOS 65V 18.5DB S...
BLF642,112	Ampleon USA ...	46.57 $	137	RF FET LDMOS 65V 19DB SOT...
BLF645,112	Ampleon USA ...	102.52 $	1442	RF FET LDMOS 65V 16DB SOT...
BLF6G13LS-250PGJ	Ampleon USA ...	134.62 $	1000	RF FET LDMOS 100V 17DB SO...
BLF6G38-10G,118	Ampleon USA ...	23.7 $	100	RF FET LDMOS 65V 14DB SOT...
BLF6G38-10G,112	Ampleon USA ...	23.7 $	1000	RF FET LDMOS 65V 14DB SOT...
BLF6G22LS-40P,118	Ampleon USA ...	40.19 $	100	RF FET LDMOS 65V 19DB SOT...
BLF644PU	Ampleon USA ...	103.4 $	57	RF FET LDMOS 65V 23.5DB S...
BLF647PS,112	Ampleon USA ...	149.83 $	19	RF FET LDMOS 65V 17DB SOT...
BLF6G38S-25,112	Ampleon USA ...	53.28 $	56	RF FET LDMOS 65V 15DB SOT...
BLF6G38LS-50,118	Ampleon USA ...	56.11 $	1000	RF FET LDMOS 65V 14DB SOT...
BLF6G38LS-50,112	Ampleon USA ...	65.39 $	85	RF FET LDMOS 65V 14DB SOT...
BLF6G21-10G,135	Ampleon USA ...	19.62 $	1000	RF FET LDMOS 65V 18.5DB S...
BLF6G21-10G,112	Ampleon USA ...	26.4 $	604	RF FET LDMOS 65V 18.5DB S...
BLF647P,112	Ampleon USA ...	149.83 $	2	RF FET LDMOS 65V 18DB SOT...
BLF6G27LS-40P,112	Ampleon USA ...	56.33 $	1000	RF FET LDMOS 65V 17DB SOT...
BLF6G13LS-250P,112	Ampleon USA ...	142.84 $	1000	RF FET LDMOS 100V 17DB SO...
BLF6G10L-40BRN,112	Ampleon USA ...	35.75 $	1000	RF FET LDMOS 65V 23DB SOT...
BLF6G22LS-40P,112	Ampleon USA ...	43.38 $	1000	RF FET LDMOS 65V 19DB SOT...
BLF6G38S-25,118	Ampleon USA ...	45.62 $	1000	RF FET LDMOS 65V 15DB SOT...
BLF6G27LS-40P,118	Ampleon USA ...	48.23 $	1000	RF FET LDMOS 65V 17DB SOT...
BLF6G27LS-40PGJ	Ampleon USA ...	48.23 $	1000	RF FET LDMOS 65V 17DB SOT...
BLF6G27L-50BN,118	Ampleon USA ...	50.17 $	1000	RF FET LDMOS 65V 16DB SOT...
BLF6G27L-50BN,112	Ampleon USA ...	53.94 $	1000	RF FET LDMOS 65V 16DB SOT...
BLF6H10LS-160,118	Ampleon USA ...	57.22 $	1000	RF FET LDMOS 104V 20DB SO...
BLF6H10LS-160,112	Ampleon USA ...	62.93 $	1000	RF FET LDMOS 104V 20DB SO...
BLF6G10L-260PBM,11	Ampleon USA ...	78.3 $	1000	RF FET LDMOS 65V SOT1110A...
BLF6G15LS-250PBRN:	Ampleon USA ...	88.95 $	1000	RF FET 65V 18.5DB SOT1110...
BLF6G15LS-250PBRN,	Ampleon USA ...	93.7 $	1000	RF FET 65V 18.5DB SOT1110...
BLF647PSJ	Ampleon USA ...	136.11 $	1000	RF FET LDMOS 65V 17DB SOT...
BLF6G15L-500H,112	Ampleon USA ...	243.31 $	1000	RF FET LDMOS 100V 16DB SO...
BLF6G15LS-500H,112	Ampleon USA ...	243.31 $	1000	RF FET LDMOS 100V 16DB SO...
BLF6G27-45,112	Ampleon USA ...	0.0 $	1000	RF FET LDMOS 65V 18DB SOT...
BLF6G10-45,135	Ampleon USA ...	0.0 $	1000	RF FET LDMOS 65V 22.5DB S...