BLF7G20L-250P,118

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS (Dual), Common Source
Frequency:	1.81GHz ~ 1.88GHz
Gain:	18dB
Voltage - Test:	28V
Current Rating:	65A
Noise Figure:	--
Current - Test:	1.9A
Power - Output:	70W
Voltage - Rated:	65V
Package / Case:	SOT539A
Supplier Device Package:	SOT539A
Base Part Number:	BLF7G20

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BLF7G20L-250P, 118 transistor is an RF field-effect transistor (FET), primarily manufactured as a digital switching circuit. It is an advanced process MOSFET, with an optimized drain current, drain-source breakdown voltage, and low gate-to-source capacitance for superior RF performance, high power handling and low on resistance. This high performance device has a wide variety of application in different industries.

Applications

The BLF7G20L-250P, 118 is a high- performance switching transistor that can be used for general purpose switching applications. It is suitable for use in high frequency and low noise applications involving cable modems, base stations and wireless LANs. Other applications include RF power amplifiers amplifiers, RF chokes, RF amplifiers and active circuit switch networks. It is especially suited for computing, digital communications and power conversion systems.

Working Principle

An FET is a type of transistor used in electronics, which comprises a source and a drain connected to a gate. This gate controls the flow of electrons through the source to the drain. When a voltage is applied to the gate, it changes the electron flow, affecting current. FETs are used in a variety of devices, such as digital switches, amplifiers, chokes and active circuit switch networks.The BLF7G20L-250P, 118 works by controlling the flow of electrons from the source to the drain by varying the electric field between the gate and the channel region. When a voltage differential is applied to the gate, electrons are attracted or repelled from the channel region where the source and drain conducts. This action results in changes to the current flow. It is this ability to control the current flow that makes FETs ideal for use as signals amplifying and switching devices.The BLF7G20L-250P, 118 is a high-performance FET with a low gate-to-source capacitance, optimized drain current and drain-source breakdown voltage. This allows for improved RF performance, high power handling and low on resistance. It also has a wide operating temperature range and excellent thermal resistance.

Conclusion

The BLF7G20L-250P, 118 is an advanced process MOSFET designed for high-performance applications. It has a low gate-to-source capacitance, optimized drain current and drain-source break down voltage for improved RF performance, high power handling and low on resistance. This high performance FET is suitable for use in a variety of applications including cable modems, base stations, wireless LANs, RF chokes, RF amplifiers and active circuit switch networks.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description