BLF7G22LS-130,112

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Transistors - FETs, MOSFETs - RF: BLF7G22LS-130,112 Application Field and Working Principle

A BLF7G22LS-130,112 is an is a dual-gate MOSFET (metal–oxide–semiconductor field-effect transistor) type belonging to a family of high-frequency transistors. They are mainly used in applications that require amplification in the radio frequency range, which is any frequency between 30 Hertz and 300 GHz.

The term MOSFET stands for metal-oxide-semiconductor FET, which is a three-terminal electronic device used for switching and voltage amplification. FETs (field-effect transistors) are transistors that utilize an electric field to control an electrical current. FETs are further categorized into bipolar junction transistors (BJTs) and junction field-effect transistors (JFETs). JFETs allow current to flow from the source to the drain, with the gate terminal controlling the flow. MOSFETs work on the same principle, but can be scaled down much more compared to JFETs, allowing them to be used for high frequency applications.

The BLF7G22LS-130,112 is a dual-gate MOSFET that has a maximum voltage of 30-Volts, a continuous drain current of 8-Amps and a power dissipation of 80W. It offers superior input and output impedances, making it suitable for use in RF power amplifiers and microwave applications. The dual-gate MOSFETs also feature a higher gain, along with better stability and noise characteristics compared to single-gate ones.

BLF7G22LS-130,112 works on the principles of voltage, resistance, and capacitance. In this type of transistor, electric current flows from the source to the drain, with the gate voltage controlling the resistance between the source and the drain. The drain current is proportional to the gate voltage, and can be efficiently controlled, allowing for high performance and accurate operation. The capacitance is the inherent capacitance between the gate and the source, and the drain and the source.

The application field for BLF7G22LS-130,112 includes RF (radio frequency) power amplifiers, antenna protection, low-noise amplifiers and microwave amplifier circuits as well as any other application requiring high-frequency operating in the range of 30 Hertz to 300 GHz.

BLF7G22LS-130,112 component is built using gold metallization over a silicon substrate. This type of metallization helps increase the performance by reducing the contact resistance of the transistor, allowing for greater power and current to be drawn from the device. The dual-gate MOSFET also has a higher thermal conductivity compared to single-gate Mosfet that helps dissipate more heat from the chip, reducing its operating temperature.

In conclusion, BLF7G22LS-130,112 is a dual-gate MOSFET type that has application field in RF (radio frequency) Power Amplifiers, antenna protection, and other RF/Microwave applications up to a maximum frequency of 300 GHz. The device features a maximum voltage of 30-Volts, drain current of 8-Amps, and power dissipation of 80W. The components metallization and temperature conductivity help enhance performance and increase life-span of the part.

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