BLF7G22LS-130,118

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A field effect transistor (FET) is the most common type of transistor used in high frequency (RF) applications. The BLF7G22LS-130,118 is a device of this type, specifically a silicon gate MOSFET manufactured by TriQuint, Inc. This device features an industry-standard package size, low power dissipation, high voltage range, high breakdown voltage, and robust gold-plated paddle. It is ideal for RF switch networks, cellular base station power amplifiers, amplifier matching networks, and antenna drivers.

The BLF7G22LS-130,118 is a depletion mode, two-terminal MOSFET device. It is made of lightly doped N-type silicon, where the main pass gate is formed with a 1000 Angstrom gate oxide layer. The drain voltages and current handling capability of the device are determined by the resistance between the drain and gate electrode, as well as the drain-gate oxide thickness. The device has an on-resistance of 1.18 ohm and a maximum Pinch-off voltage of -130 V. The device\'s VGS(th) is -1.7V to -3.8V, which allows it to be used in RF switch networks and other applications requiring low gate voltages.

The BLF7G22LS-130,118 is a very good device for RF applications because of its low on-resistance, high voltage range, and robust gold-plated paddle. Its high voltage range and low on-resistance make it an ideal choice for amplifier matching networks, antenna drivers, and other applications requiring wide operating voltage and current range. Additionally, its gold-plated paddle improves contact resistance and makes it suitable for high frequency applications.

The working principle of the BLF7G22LS-130,118 is founded on the Maxwell-Boltzmann equation, which states that the current between two electrodes is proportional to the applied voltage. In the case of this device, the current will flow between the drain and gate electrodes when a voltage is applied between them. When the voltage between the electrodes is increased, the current increases as well. The overall resistance between the electrodes is then determined by the field effect, or the increased current when a high voltage is applied. This principle is the basis for FETs, and is what makes them ideal for RF applications.

In conclusion, the BLF7G22LS-130,118 is a two-terminal MOSFET device, manufactured by TriQuint, Inc. It is ideal for RF switch networks, amplifier matching networks, and antenna drivers due to its low on-resistance, wide operating voltage and current ranges, and robust gold-plated paddle. The device’s working principle is based on the Maxwell-Boltzmann equation, where the current between two electrodes is proportional to the applied voltage. This principle is the basis for all FETs, making them uniquely suitable for high frequency applications.

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