BLF7G24LS-140,112 Allicdata Electronics
Allicdata Part #:

568-8628-5-ND

Manufacturer Part#:

BLF7G24LS-140,112

Price: $ 51.22
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 18.5DB SOT502B
More Detail: RF Mosfet LDMOS 28V 1.3A 2.3GHz ~ 2.4GHz 18.5dB 30...
DataSheet: BLF7G24LS-140,112 datasheetBLF7G24LS-140,112 Datasheet/PDF
Quantity: 13
1 +: $ 46.56330
10 +: $ 44.23610
100 +: $ 39.87060
Stock 13Can Ship Immediately
$ 51.22
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: LDMOS
Frequency: 2.3GHz ~ 2.4GHz
Gain: 18.5dB
Voltage - Test: 28V
Current Rating: 28A
Noise Figure: --
Current - Test: 1.3A
Power - Output: 30W
Voltage - Rated: 65V
Package / Case: SOT-502B
Supplier Device Package: SOT502B
Base Part Number: BLF7G24
Description

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The BLF7G24LS-140,112 is a high performance field effect transistor (FET) designed specifically for use in radio frequency (RF) applications. It is a N-channel MOSFET, which means it has an insulated-gate field-effect structure that uses a metal–oxide–semiconductor (MOS) capacitance as the input element between the drain and source terminals. The device is optimized for low loss and high-frequency operation, achieving very low figures of merit.

The BLF7G24LS-140,112 is an excellent choice for use in a wide range of radio frequency applications. These include radio transmitter, receiver and amplifier circuits for cellular telephones, GPS receivers and other wireless systems. It is also suitable for use in applications that require high gain, low noise and a flat frequency response. The device is also well suited for use as switching elements in high-frequency switching circuits.

The working principle of the BLF7G24LS-140,112 is based on the same principles as other types of FETs. Its metal-oxide-semiconductor (MOS) input capacitance is used to control the amount of current that is allowed to flow through the device. The capacitance of the MOS input is independent of the voltage applied to the gate, enabling very precise control of the device\'s conductivity. By varying the voltage applied to the gate, the current flowing through the device can be controlled. This enables high levels of power efficiency and precise control of the device\'s output.

The BLF7G24LS-140,112 also has several advantages over other types of FETs. It has a lower input capacitance compared to other types of FETs, which reduces loss and ensures high efficiency. It also operates at a much higher speed than most other FETs, which is important for applications that require fast switching. Its built-in compensation network also helps to ensure extremely low levels of distortion and phase errors, making it suitable for applications that require very precise control.

Overall, the BLF7G24LS-140,112 has many features that make it an excellent choice for use in radio frequency applications. Its small size, low input capacitance and high speed operation make it ideal for use as an amplifier, switch or receiver in a wide range of applications. Its built-in compensation network ensures extremely low levels of distortion and phase errors, making it the ideal choice for a wide range of precision applications. The device is also available in a variety of package sizes, making it suitable for use in a wide range of space-constrained systems.

The specific data is subject to PDF, and the above content is for reference

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