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BLF7G22LS-250P,118 Transistors - FETs, MOSFETs-RF Application and Principles

The BLF7G22LS-250P,118 is a high-power MOSFET from ON Semiconductor. This high-power MOSFET is an ideal choice for applications where high current switching is required, as it can handle up to 15A continuously.This MOSFET has a drain-source on-resistance of 0.7 mΩ and a maximum drain-source breakdown voltage of 28V. It features a fast switching speed of 350 ns and a low gate-source capacitance of 300 pF. It has a total power dissipation of 152W, which makes it suitable for power amplification applications.

Types of FETs

FETs are a type of electronic device that can be used to control the flow of electric current. They are also referred to as Field-Effect Transistors, due to the way they work. FETs are divided into two main types: enhancement-mode and depletion-mode.Enhancement-mode FETs use an electric field to control the current through them, while the depletion-mode FETs use a reverse electric field to control the current through them. Both types of FETs are used in a wide variety of applications, including audio amplification, power supplies, switching systems and more.The BLF7G22LS-250P,118 is an enhancement-mode MOSFET, which makes it ideal for switching applications.

Working Principle of FETs

FETs are composed of three terminals: a gate, a source, and a drain. The three terminals allow them to be used as both a switch and an amplifier.When a voltage is applied to the gate terminal, it changes the characteristics of the other two terminals, allowing current to flow or not, depending on the voltage level.For example, if the voltage level is low, the source and drain will be cut off from each other, which prevents current flow. If the voltage level is high, the source and drain will be connected, which allows current flow.

Applications

FETs are widely used in a variety of applications, such as audio amplification, power supplies, and switching systems. The BLF7G22LS-250P,118 is suitable for use in high-power switching applications, such as motor control, power supplies, and power amplifiers.This device can also be used in low-frequency RF applications, such as FM receivers, FM transmitters, and radar systems. In addition, it is suitable for use in charging circuits, as well as applications that require fast switching speeds.

Conclusion

The BLF7G22LS-250P,118 is a high-power MOSFET from ON Semiconductor. This MOSFET has a drain-source on-resistance of 0.7 mΩ and a maximum drain-source breakdown voltage of 28V. It features a fast switching speed of 350 ns and a low gate-source capacitance of 300 pF.It is an enhancement-mode MOSFET, which makes it ideal for switching applications, such as motor control, power supplies, and power amplifiers. It can also be used in low-frequency RF applications, such as FM receivers, FM transmitters, and radar systems. In addition, it is suitable for use in charging circuits, as well as applications that require fast switching speeds.

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