BLF7G27LS-100,118 Discrete Semiconductor Products |
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Allicdata Part #: | BLF7G27LS-100,118-ND |
Manufacturer Part#: |
BLF7G27LS-100,118 |
Price: | $ 53.52 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 18DB SOT502B |
More Detail: | RF Mosfet LDMOS 28V 900mA 2.5GHz ~ 2.7GHz 18dB 20W... |
DataSheet: | BLF7G27LS-100,118 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 48.66150 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 2.5GHz ~ 2.7GHz |
Gain: | 18dB |
Voltage - Test: | 28V |
Current Rating: | 28A |
Noise Figure: | -- |
Current - Test: | 900mA |
Power - Output: | 20W |
Voltage - Rated: | 65V |
Package / Case: | SOT-502B |
Supplier Device Package: | SOT502B |
Base Part Number: | BLF7G27 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BLF7G27LS-100,118 is a type of device known as a field-effect transistor (FET), which is a type of transistor that typically uses electric fields to control the amount of current flowing through it. It is a special type of FET known as a metal-oxide-semiconductor FET (MOSFET), and is used for radio-frequency (RF) applications. BLF7G27LS-100,118 is composed of a gate, a source, a drain, and a structure known as a field oxide, which consists of a layer of oxide (typically silicon dioxide) between a source and a drain. In addition, the gate of the BLF7G27LS-100,118 is insulated from the source and drain by a thin layer of dielectric (a material with an extremely high insulating power).
The operation of the BLF7G27LS-100,118 is essentially based on a capacitive coupling between the gate and the source ("gate-source capacitance"); when a voltage difference is applied between the gate and the source, the gate capacitance causes a charge to build up in the channel ( formed by the source and the drain ) and creates a channel of electrons from the source to the drain, allowing current to flow. The amount of current that can flow is determined by the strength of the electric field applied to the channel, which is controlled by the voltage difference between the gate and the source (dynamic resistance is also affected by channel length and width).
Some of the advantages of using BLF7G27LS-100,118 in RF applications include its small size, wide dynamic range (self-adjusts its operation to meet changing demands), small signal distortion (provides superior signal fidelity at high frequencies), large blocking capability (prevents signal crosstalk of small signals), control of low power signals (for complex modulation and coding), and high switching speed (reduces overall system size).
BLF7G27LS-100,118 is used in a variety of RF applications, including wireless communication systems, broadcast networks, satellite communications, and more. In wireless communication systems, it is used for antijamming and EMI protection, as well as for power amplifiers and switching circuits. In broadcast networks, it is used for low noise amplifiers, amplifiers for a variety of frequencies, and for base stations. In satellite communications, it is used for high speed data transmission, modulation and coding, and for antennas. In addition, it is used for radar systems, for medical applications, for industrial control systems, and for different types of test equipment.
BLF7G27LS-100,118 is a very versatile device, and its capabilities and performance have been extensively tested and proven. Its easy integration into various applications makes it a very desirable choice for many RF engineers and designers. Furthermore, its flexibility and wide operational range mean that it can be used in a variety of scenarios and applications, making it one of the most reliable and reliable devices available on the market.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BLF7G27L-135,118 | Ampleon USA ... | 0.0 $ | 1000 | TRANSISTOR RF PWR LDMOS S... |
BLF7G10L-250,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
BLF7G10L-250,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
BLF7G10LS-250,118 | Ampleon USA ... | 68.57 $ | 100 | RF FET LDMOS 65V 19.5DB S... |
BLF7G20LS-200,118 | Ampleon USA ... | 62.71 $ | 100 | RF FET LDMOS 65V 18DB SOT... |
BLF7G24LS-100,112 | Ampleon USA ... | 46.57 $ | 92 | RF FET LDMOS 65V 18DB SOT... |
BLF7G24LS-140,112 | Ampleon USA ... | 51.22 $ | 13 | RF FET LDMOS 65V 18.5DB S... |
BLF7G24LS-100,118 | Ampleon USA ... | 39.87 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G24LS-140,118 | Ampleon USA ... | 43.86 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G20LS-90P,118 | Ampleon USA ... | 45.65 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
BLF7G20LS-90P,112 | Ampleon USA ... | 49.32 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
BLF7G27LS-100,118 | Ampleon USA ... | 53.52 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G27LS-100,112 | Ampleon USA ... | 57.55 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G22LS-200,118 | Ampleon USA ... | 59.61 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G21LS-160P,118 | Ampleon USA ... | 61.04 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G22LS-200,112 | Ampleon USA ... | 64.1 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G21LS-160P,112 | Ampleon USA ... | 65.63 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G20LS-200,112 | Ampleon USA ... | 67.43 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G27LS-140,118 | Ampleon USA ... | 68.57 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLF7G27LS-150P,118 | Ampleon USA ... | 73.3 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLF7G27LS-140,112 | Ampleon USA ... | 73.72 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLF7G27L-135,112 | Ampleon USA ... | 73.72 $ | 1000 | TRANSISTOR RF PWR LDMOS S... |
BLF7G10LS-250,112 | Ampleon USA ... | 73.72 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
BLF7G24LS-160P,118 | Ampleon USA ... | 74.94 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G24LS-160P,112 | Ampleon USA ... | 78.95 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G20LS-250P,118 | Ampleon USA ... | 82.73 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G22LS-250P,118 | Ampleon USA ... | 85.68 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G20LS-250P,112 | Ampleon USA ... | 87.14 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G22LS-250P,112 | Ampleon USA ... | 90.27 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G22L-200,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G22LS-130,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G22LS-130,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G22LS-160,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G22LS-160,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G20LS-140P,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF7G20LS-140P,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF7G22L-130,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G22L-130,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G20L-90P,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
BLF7G20L-90P,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
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