BLF7G27L-135,118 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A Field effect transistor, or FET, is a type of transistor commonly used for RF applications, such as radios and amplifiers. The BLF7G27L-135,118 is a high performance RF FET designed to provide superior performance and reliability. This article will discuss the application field and working principle of the BLF7G27L-135,118.

The BLF7G27L-135,118 is designed for use in a range of high power, high frequency applications. It is well suited for use in microwave circuits, such as in power amplifiers, mixers, and oscillators. The FET can also be used in medical and telecommunications equipment, as well as in other applications requiring high power, high frequency operation. The device is also suitable for use in applications requiring low noise, such as cellular base stations and satellite communications.

The BLF7G27L-135,118 is a high temperature, radiation hardened, gate enhanced FET. It has a low profile package, and can operate safely under conditions of extreme temperature and radiation. The FET is designed for use in high frequency applications, with a maximum frequency of 20GHz. It is also designed for use in high power applications, with a maximum power of 160 Watts.

The working principle of the device is based on the field effect principle. The device consists of a source, drain and gate. The source of the device is biased, and the voltage applied to the drain creates a channel between the source and drain. The channel is then filled with electric charge, creating a current flow. The current is then modulated by applying a voltage on the gate.

The gate voltage determines the current flow, and by varying the voltage, it is possible to control the current. This is known as the “current gain” of the FET. The current gain is typically expressed in terms of current/voltage ratio. In the case of the BLF7G27L-135,118, the current gain is typically 200 - 300.

The BLF7G27L-135,118 is a high performance RF FET designed for use in a wide range of high power, high frequency applications. It is a high temperature, radiation hardened, gate enhanced FET, with a low profile package and a maximum power of 160 Watts. The device utilizes the field effect principle, with its current gain typically expressed in terms of current/voltage ratio. The device is well suited for use in microwave circuits, such as in power amplifiers, mixers, and oscillators, as well as medical and telecommunications equipment, cellular base stations, and satellite communications.

The specific data is subject to PDF, and the above content is for reference