BLF7G21L-160P,112

The BLF7G21L-160P,112 is a device that falls under the category of transistors called field-effect transistors (FETs). In a FET, an electric field is used to control the size of a channel between source and drain of a semi-conductor. The BLF7G21L-160P,112 is a radio frequency (RF) metal-oxide-semiconductor field effect transistor (MOSFET) device. It can be used for various radio frequency applications.The BLF7G21L-160P,112 is a high power MOSFET transistor device. It is rated for 160Watt power dissipation, 21dB gain and 20V drain-source voltage. It also features an unmatched input/output impedance ratio, a low noise figure, a wide bandwidth and good operating temperature range. It is designed with on-chip resistors and capacitors to ensure proper bias current and stability.The working principle of the device is relatively simple. When a small voltage is applied to the gate, the resistance between the source and the drain changes. This is the basic principle of a MOSFET transistor device. It is important to note that the input impedance of the gate is much higher than the output impedance of the drains and sources.In order to properly use the BLF7G21L-160P,112, it is important to have a good understanding of the device\'s application field and working principle. The device is intended to be used in a wide variety of radio frequency applications, such as high power amplifiers, microwave stations, and base station communication systems. It can also be used for antenna switches and base station communication systems.In high power amplifiers, the BLF7G21L-160P,112 acts as an amplifier for signals in the radio frequency range. It boosts weak signals and reduces noise. The device\'s low noise figure and wide frequency range are particularly important in this application.In microwave stations, the BLF7G21L-160P,112 is used to amplify signals in the microwave frequency range in order to cover a large area. In order to ensure proper operation, shielding should be employed in order to reduce interference. The device\'s low noise figure and wide bandwidth are important in this application.In base station communication systems, the BLF7G21L-160P,112 is used to amplify signals in the base station frequency range in order to maximize transmission quality. In order to ensure that the device works properly, it is important to use proper temperature, voltage, and power management. The device\'s high power dissipation, unmatched input/output impedance ratio, low noise figure, wide bandwidth and good operating temperature range are crucial in this application.In antenna switches, the BLF7G21L-160P,112 is used to switch the instrument from one antenna to another. This is important in a variety of applications, such as those involving mobile base stations. The device\'s low noise figure and wide frequency range are important in this application.In conclusion, the BLF7G21L-160P,112 is a high power MOSFET device that can be used for various radio frequency applications. It is designed with on-chip resistors and capacitors to ensure proper bias current and stability. Its key features include a high power dissipation, unmatched input/output impedance ratio, low noise figure, wide bandwidth and good operating temperature range. It is important to understand the application field and working principle of the device in order to properly use it.

BLF7G27L-135,118	Ampleon USA ...	0.0 $	1000	TRANSISTOR RF PWR LDMOS S...
BLF7G10L-250,112	Ampleon USA ...	0.0 $	1000	RF FET LDMOS 65V 19.5DB S...
BLF7G10L-250,118	Ampleon USA ...	0.0 $	1000	RF FET LDMOS 65V 19.5DB S...
BLF7G10LS-250,118	Ampleon USA ...	68.57 $	100	RF FET LDMOS 65V 19.5DB S...
BLF7G20LS-200,118	Ampleon USA ...	62.71 $	100	RF FET LDMOS 65V 18DB SOT...
BLF7G24LS-100,112	Ampleon USA ...	46.57 $	92	RF FET LDMOS 65V 18DB SOT...
BLF7G24LS-140,112	Ampleon USA ...	51.22 $	13	RF FET LDMOS 65V 18.5DB S...
BLF7G24LS-100,118	Ampleon USA ...	39.87 $	1000	RF FET LDMOS 65V 18DB SOT...
BLF7G24LS-140,118	Ampleon USA ...	43.86 $	1000	RF FET LDMOS 65V 18.5DB S...
BLF7G20LS-90P,118	Ampleon USA ...	45.65 $	1000	RF FET LDMOS 65V 19.5DB S...
BLF7G20LS-90P,112	Ampleon USA ...	49.32 $	1000	RF FET LDMOS 65V 19.5DB S...
BLF7G27LS-100,118	Ampleon USA ...	53.52 $	1000	RF FET LDMOS 65V 18DB SOT...
BLF7G27LS-100,112	Ampleon USA ...	57.55 $	1000	RF FET LDMOS 65V 18DB SOT...
BLF7G22LS-200,118	Ampleon USA ...	59.61 $	1000	RF FET LDMOS 65V 18.5DB S...
BLF7G21LS-160P,118	Ampleon USA ...	61.04 $	1000	RF FET LDMOS 65V 18DB SOT...
BLF7G22LS-200,112	Ampleon USA ...	64.1 $	1000	RF FET LDMOS 65V 18.5DB S...
BLF7G21LS-160P,112	Ampleon USA ...	65.63 $	1000	RF FET LDMOS 65V 18DB SOT...
BLF7G20LS-200,112	Ampleon USA ...	67.43 $	1000	RF FET LDMOS 65V 18DB SOT...
BLF7G27LS-140,118	Ampleon USA ...	68.57 $	1000	RF FET LDMOS 65V 16DB SOT...
BLF7G27LS-150P,118	Ampleon USA ...	73.3 $	1000	RF FET LDMOS 65V 16DB SOT...
BLF7G27LS-140,112	Ampleon USA ...	73.72 $	1000	RF FET LDMOS 65V 16DB SOT...
BLF7G27L-135,112	Ampleon USA ...	73.72 $	1000	TRANSISTOR RF PWR LDMOS S...
BLF7G10LS-250,112	Ampleon USA ...	73.72 $	1000	RF FET LDMOS 65V 19.5DB S...
BLF7G24LS-160P,118	Ampleon USA ...	74.94 $	1000	RF FET LDMOS 65V 18.5DB S...
BLF7G24LS-160P,112	Ampleon USA ...	78.95 $	1000	RF FET LDMOS 65V 18.5DB S...
BLF7G20LS-250P,118	Ampleon USA ...	82.73 $	1000	RF FET LDMOS 65V 18DB SOT...
BLF7G22LS-250P,118	Ampleon USA ...	85.68 $	1000	RF FET LDMOS 65V 18.5DB S...
BLF7G20LS-250P,112	Ampleon USA ...	87.14 $	1000	RF FET LDMOS 65V 18DB SOT...
BLF7G22LS-250P,112	Ampleon USA ...	90.27 $	1000	RF FET LDMOS 65V 18.5DB S...
BLF7G22L-200,118	Ampleon USA ...	0.0 $	1000	RF FET LDMOS 65V 18.5DB S...
BLF7G22LS-130,118	Ampleon USA ...	0.0 $	1000	RF FET LDMOS 65V 18.5DB S...
BLF7G22LS-130,112	Ampleon USA ...	0.0 $	1000	RF FET LDMOS 65V 18.5DB S...
BLF7G22LS-160,118	Ampleon USA ...	0.0 $	1000	RF FET LDMOS 65V 18DB SOT...
BLF7G22LS-160,112	Ampleon USA ...	0.0 $	1000	RF FET LDMOS 65V 18DB SOT...
BLF7G20LS-140P,118	Ampleon USA ...	0.0 $	1000	RF FET LDMOS 65V 17DB SOT...
BLF7G20LS-140P,112	Ampleon USA ...	0.0 $	1000	RF FET LDMOS 65V 17DB SOT...
BLF7G22L-130,112	Ampleon USA ...	0.0 $	1000	RF FET LDMOS 65V 18.5DB S...
BLF7G22L-130,118	Ampleon USA ...	0.0 $	1000	RF FET LDMOS 65V 18.5DB S...
BLF7G20L-90P,112	Ampleon USA ...	0.0 $	1000	RF FET LDMOS 65V 19.5DB S...
BLF7G20L-90P,118	Ampleon USA ...	0.0 $	1000	RF FET LDMOS 65V 19.5DB S...