Allicdata Part #: | 568-8625-5-ND |
Manufacturer Part#: |
BLF7G24L-100,112 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 18DB SOT502A |
More Detail: | RF Mosfet LDMOS 28V 900mA 2.3GHz ~ 2.4GHz 18dB 20W... |
DataSheet: | BLF7G24L-100,112 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2.3GHz ~ 2.4GHz |
Gain: | 18dB |
Voltage - Test: | 28V |
Current Rating: | 28A |
Noise Figure: | -- |
Current - Test: | 900mA |
Power - Output: | 20W |
Voltage - Rated: | 65V |
Package / Case: | SOT-502A |
Supplier Device Package: | LDMOST |
Base Part Number: | BLF7G24 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BLF7G24L-100, 112 is a type of transistor specifically known as a Field Effect Transistor (FET) and is most often categorized as a type of Radio Frequency (RF) field effect transistor. This type of transistor is commonly used in wireless networking applications and can be found in common routers, cell phones, and other wireless products. The BLF7G24L-100, 112 has an impressive frequency range of 800MHz to 4GHz, making it ideal for wireless networking and base station applications.
The BLF7G24L-100, 112 is a three-terminal device consisting of a gate, drain and source. The gate is connected to the input of the device and is used to regulate the current flowing between the drain and source. The difference in potential at the gate controls the resistance between the two and thereby determines the amount of current allowed to pass between the two. This method of controlling current is the primary mechanism of RF FETs and allows them to control and move large amounts of data over very short distances.
One of the primary benefits of an RF field effect transistor is the fact that it operates without the need for complex circuits. This makes it not only easier to install, but also much more efficient. The electronics in the BLF7G24L-100, 112 are designed to be both simple and effective, allowing it to process data quickly and accurately. This is essential for applications such as wireless networking, where data must be transmitted properly and quickly in order for the system to function correctly.
In addition to the benefits of simplicity and efficiency, the BLF7G24L-100, 112 is also a durable device. It is manufactured with top grade materials that can withstand heat and humidity, as well as exposure to electromagnetic fields. These features make it ideal for use in network routers, cellular towers, and other environments where temperature and electromagnetic exposure are high. This allows the transistor to remain operational for a long period of time, even in challenging conditions.
The BLF7G24L-100, 112 is a versatile device and can be used in a variety of applications. It is primarily used in wireless networking applications, such as routers, base stations, and cellular towers. However, it can also be used in more specialized applications, such as aerospace and automotive systems.
In conclusion, the BLF7G24L-100, 112 is a field effect transistor (FET) that is classified as an RF field effect transistor. This type of transistor is commonly used for wireless networking applications, allowing signals to be transmitted quickly and efficiently over short distances. It is lightweight and durable, and provides superior performance in challenging conditions. Furthermore, it is a versatile device that can be used for a variety of purposes, from wireless networking to specialized applications. The BLF7G24L-100, 112 is an ideal choice for any application that requires reliable and efficient performance.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BLF7G27L-135,118 | Ampleon USA ... | 0.0 $ | 1000 | TRANSISTOR RF PWR LDMOS S... |
BLF7G10L-250,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
BLF7G10L-250,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
BLF7G10LS-250,118 | Ampleon USA ... | 68.57 $ | 100 | RF FET LDMOS 65V 19.5DB S... |
BLF7G20LS-200,118 | Ampleon USA ... | 62.71 $ | 100 | RF FET LDMOS 65V 18DB SOT... |
BLF7G24LS-100,112 | Ampleon USA ... | 46.57 $ | 92 | RF FET LDMOS 65V 18DB SOT... |
BLF7G24LS-140,112 | Ampleon USA ... | 51.22 $ | 13 | RF FET LDMOS 65V 18.5DB S... |
BLF7G24LS-100,118 | Ampleon USA ... | 39.87 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G24LS-140,118 | Ampleon USA ... | 43.86 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G20LS-90P,118 | Ampleon USA ... | 45.65 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
BLF7G20LS-90P,112 | Ampleon USA ... | 49.32 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
BLF7G27LS-100,118 | Ampleon USA ... | 53.52 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G27LS-100,112 | Ampleon USA ... | 57.55 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G22LS-200,118 | Ampleon USA ... | 59.61 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G21LS-160P,118 | Ampleon USA ... | 61.04 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G22LS-200,112 | Ampleon USA ... | 64.1 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G21LS-160P,112 | Ampleon USA ... | 65.63 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G20LS-200,112 | Ampleon USA ... | 67.43 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G27LS-140,118 | Ampleon USA ... | 68.57 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLF7G27LS-150P,118 | Ampleon USA ... | 73.3 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLF7G27LS-140,112 | Ampleon USA ... | 73.72 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLF7G27L-135,112 | Ampleon USA ... | 73.72 $ | 1000 | TRANSISTOR RF PWR LDMOS S... |
BLF7G10LS-250,112 | Ampleon USA ... | 73.72 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
BLF7G24LS-160P,118 | Ampleon USA ... | 74.94 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G24LS-160P,112 | Ampleon USA ... | 78.95 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G20LS-250P,118 | Ampleon USA ... | 82.73 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G22LS-250P,118 | Ampleon USA ... | 85.68 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G20LS-250P,112 | Ampleon USA ... | 87.14 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G22LS-250P,112 | Ampleon USA ... | 90.27 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G22L-200,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G22LS-130,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G22LS-130,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G22LS-160,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G22LS-160,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G20LS-140P,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF7G20LS-140P,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF7G22L-130,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G22L-130,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G20L-90P,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
BLF7G20L-90P,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
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