BLF7G24L-140,112

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BLF7G24L-140,112 is a gallium nitride (GaN) high electron mobility transistor (HEMT) specifically designed for radio frequency (RF) power amplification applications. The device is designed to reliably operate up to 5.0GHz and provides class leading efficiency and gain performance. This article provides an overview of the application field and working principle of BLF7G24L-140,112.

Application Fields:

BLF7G24L-140,112 is an ideal choice for applications that require reliable, high power, and high efficiency performance such as amplifier applications in the microwave, satellite and space communication systems, cellular base stations, and medical imaging. It is also suitable as a driver amplifier stage for ultra-high frequency (UHF) and very high frequency (VHF) amplifier applications. The device offers excellent linearity, high gain, and wideband output power over a wide temperature range.

Working Principle:

The BLF7G24L-140,112 operates on a gallium nitride (GaN) high electron mobility transistor (HEMT) principle. It works in three main steps: injection of electrons, acceleration of electrons, and release of electrons at the drain. In order to inject the electrons, a voltage is applied to the gate. The applied voltage creates a field that accelerates the electrons towards the drain electrode. When the electrons reach the drain electrode, they are released into the drain. The number of electrons injected is proportional to the current flow and the voltage across the gate-drain, thus resulting in a linear amplification of the signal.

The BLF7G24L-140,112 features a high breakdown voltage, high DC current handling capability, and high power output. It is designed to deliver superior linearity and gain performance for applications such as ultra-high frequency (UHF) and very high frequency (VHF) amplifier stages, microwave systems, satellite, and space communication systems, cellular base stations and medical imaging. Due to its superior efficiency, the device is capable of achieving high output power levels of up to 5.0GHz. The device offers excellent thermal properties, making it ideal for high-power applications.

In summary, the BLF7G24L-140,112 is a GaN HEMT specifically designed for RF power amplification applications. It is an ideal choice for applications that require reliable, high power, and high efficiency performance. The device is designed to reliably operate up to 5.0GHz and provides class leading efficiency and gain performance. The device features a high breakdown voltage, high DC current handling capability, and high power output, making it ideal for high-power applications.

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