BLF7G24L-140,118 Allicdata Electronics
Allicdata Part #:

BLF7G24L-140,118-ND

Manufacturer Part#:

BLF7G24L-140,118

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 18.5DB SOT502A
More Detail: RF Mosfet LDMOS 28V 1.3A 2.3GHz ~ 2.4GHz 18.5dB 30...
DataSheet: BLF7G24L-140,118 datasheetBLF7G24L-140,118 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 2.3GHz ~ 2.4GHz
Gain: 18.5dB
Voltage - Test: 28V
Current Rating: 28A
Noise Figure: --
Current - Test: 1.3A
Power - Output: 30W
Voltage - Rated: 65V
Package / Case: SOT-502A
Supplier Device Package: LDMOST
Base Part Number: BLF7G24
Description

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Introduction

BLF7G24L-140,118 is an RF device in the Transistors - FETs, MOSFETs - RF family. This component acts as a field effect transistor (FET) and is used in applications involving radio frequency signals. This family of FETs is mainly used for power amplification, low noise, and low distortion. BLF7G24L-140,118 is ideal for switch mode power amplifier applications such as short range UHF transceivers. This article will discuss the application field and working principle of the BLF7G24L-140,118.

Application Field

BLF7G24L-140,118 is used in many different applications, especially in communication systems. It is used in high-power amplifiers, low-noise preamps, oscillators, mixers, and even modulators. It is also suitable for modulating power amplifiers in VHF, UHF, and microwave equipment. This device provides low distortion and low noise operation. As a result, it is often used in GSM, UMTS, and WLANS applications. Additionally, this device can also be used in wireless LANs and short-to-medium range wireless applications.

Working Principle

BLF7G24L-140,118 is a field effect transistor that works on the principle of controlling the current flow by applying an electric field to the gate of the transistor. This is done by passing drain and source voltages to the transistor. The gate is insulated from the source and drain, allowing the gate to be controlled independently. As a result, the amount of current passing through the transistor can be controlled by varying the gate voltage.When the gate voltage is positive, the current flow is blocked and when the gate voltage is negative, the current flows through the transistor. This transistor is a depletion mode type, which means that current flow is blocked until the gate voltage is made negative. This enables smooth switching action and is ideal for applications requiring high speed and low power.

Conclusion

BLF7G24L-140,118 is a field effect transistor that is used in RF applications such as amplifiers, mixers, and oscillators. The transistor works on the principle of applying an electric field to the gate of the transistor to control the current flow through it. This enables smooth switching action and is ideal for applications requiring high speed and low power. This device provides low distortion and low noise operation, making it ideal for GSM, UMTS, and WLAN applications.

The specific data is subject to PDF, and the above content is for reference

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