BLF7G27L-100,118 Allicdata Electronics
Allicdata Part #:

BLF7G27L-100,118-ND

Manufacturer Part#:

BLF7G27L-100,118

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 18DB SOT502A
More Detail: RF Mosfet LDMOS 28V 900mA 2.5GHz ~ 2.7GHz 18dB 20W...
DataSheet: BLF7G27L-100,118 datasheetBLF7G27L-100,118 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 2.5GHz ~ 2.7GHz
Gain: 18dB
Voltage - Test: 28V
Current Rating: 28A
Noise Figure: --
Current - Test: 900mA
Power - Output: 20W
Voltage - Rated: 65V
Package / Case: SOT-502A
Supplier Device Package: LDMOST
Base Part Number: BLF7G27
Description

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In the field of electronic engineering, transistors have become an important part of the design and implementation of a circuit. Of the many different types available, FETs, MOSFETs, and RF transistors in particular, have become increasingly popular. One specific example of this is the BLF7G27L-100,118. This article will discuss the application field and working principle of this particular transistor.

BLF7G27L-100,118 Application Field

The BLF7G27L-100,118 is a RF N-Channel, metal oxide semiconductor field-effect transistor. This makes it highly capable of managing, routing, and controlling a variety of different signals. Specifically, these transistors are mostly used in Wi-Fi or Bluetooth applications, or in the context of amplifier circuits, or switching devices. This is due to the fact that they are particularly adept at transferring, handling, and boosting power. They are also relatively easy to use, being compact and capable of fitting into most circuits with relative ease.

BLF7G27L-100,118 Working Principle

The way in which the BLF7G27L-100,118 works is through the use of a field effect. This effect is made possible due to the presence of a MOS (metal oxide semiconductor) which serves as a gate, or a central control for the transistor. This MOS feature is capable of allowing or restricting the flow of electrons, depending on the voltage that is supplied to it. This makes it an excellent choice for controlling the power of a circuit, and manipulating the signals that are being sent throughout it.

In addition to this, the BLF7G27L-100,118 is capable of withstanding higher voltages without any kind of breakdown. This makes it particularly useful when employed alongside ICs, as it can provide signals to the IC without experiencing any degradation. This also allows for more efficient power consumption when using this transistor, as it can supply a consistent voltage.

Conclusion

In conclusion, the BLF7G27L-100,118 is a powerful and efficient FET, MOSFET, and RF transistor, designed for the field of electronic engineering. This particular transistor is commonly used in Wi-Fi and Bluetooth applications, as well as amplifier and switching circuits. Its working principle is closely related to the field effect, which works through allowing or restricting the flow of electrons dependent on the voltage supplied, making it an excellent choice for controlling power. Its high voltage reliability and low power consumption also makes it a highly sought after choice amongst many engineers.

The specific data is subject to PDF, and the above content is for reference

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