BLF7G27L-140,112

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	2.5GHz ~ 2.7GHz
Gain:	16.5dB
Voltage - Test:	28V
Current Rating:	28A
Noise Figure:	--
Current - Test:	1.3A
Power - Output:	30W
Voltage - Rated:	65V
Package / Case:	SOT-502A
Supplier Device Package:	LDMOST
Base Part Number:	BLF7G27

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The BLF7G27L-140,112 is a class of transistors categorized as Field Effect Transistors (FETs) and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). Specifically, it is a high performance N-Channel Radio Frequency (RF) MOSFET transistor. The frequency range for this particular transistor is from DC to an astonishing 4GHz and is suited for use in a variety of power amplifying and switching scenarios. A transistor, in the most basic sense, works as a switch to control or amplify an electrical signal. It is essentially a semiconductor that consists of three or more terminals – the gate, drain and source – and when powered by a suitable voltage, controlled by the gate, opens up a channel that allows current to flow through the drain and source, thus amplifying the signal. The BLF7G27L-140,112 is an N-channel device, meaning it works with a negative on the gate, and a positive on the source and drain. When voltage is applied to the gate, electrons are able to flow freely through the source and drain, thus turning the MOSFET transistor \'on\'. To turn it \'off\', the voltage supply needs to be removed from the gate and the electrons cannot flow as freely. Due to the high performance of this particular transistor, its fields of application are relatively vast. One of the main uses for this device is in RF applications such as Cell Phone Systems, Wifi, and Bluetooth. It is used in situations where a large amount of small signals need to be amplified or switched, given its large frequency range and excellent power handling capabilities. In terms of the working principle of this transistor, its single-gate N-MOSFET structure is relatively simple. N-channel is basically semiconductor with a negative charge on the gate. When a voltage is applied to the gate, the electrons gain enough potential energy to break the \'energy barrier\' of the FET and flow freely through the channel between the source and drain. The gate (G) material of the BLF7G27L-140,112 is a semiconductor material, while the drain (D) and source (S) are metallic. When a suitable gate voltage is applied, the channel between the source and drain is opened up, allowing an increase in the current flow. This can be used for increase in power gain or for switching purposes. The source-drain channel is opened when the gate-source voltage is larger than the threshold voltage, which is determined by the material used and the doping concentration in the body. When the gate voltage is equal to the threshold voltage, the transistor enters the saturation region, where drain current is controlled. Transistor in this region is mainly used for amplification. The BLF7G27L-140,112 is an example of an RF N-channel MOSFET transistor, suitable for a variety of applications. Its vast frequency range and excellent power handling capabilities make it a great choice for various power amplifying and switching scenarios. Its single gate structure and enhanced current handling capabilities make it a highly desirable choice for RF applications. All in all, the BLF7G27L-140,112 is a great transistor for a variety of applications.

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