| Allicdata Part #: | BSP324E6327-ND |
| Manufacturer Part#: |
BSP324 E6327 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 400V 170MA SOT-223 |
| More Detail: | N-Channel 400V 170mA (Ta) 1.8W (Ta) Surface Mount ... |
| DataSheet: |  BSP324 E6327 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 2.3V @ 94µA |
| Package / Case: | TO-261-4, TO-261AA |
| Supplier Device Package: | PG-SOT223-4 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.8W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 154pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 5.9nC @ 10V |
| Series: | SIPMOS® |
| Rds On (Max) @ Id, Vgs: | 25 Ohm @ 170mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 170mA (Ta) |
| Drain to Source Voltage (Vdss): | 400V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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The BSP324 E6327 is a common field-effect transistor used for a wide range of applications. It is a metal oxide semiconductor field-effect transistor (MOSFET), a type of transistor in which the current-carrying channel is formed by the voltage applied to the gate. MOSFETs are versatile and used extensively in a variety of industrial applications due to their ability to switch large currents in high-power applications. The BSP324 E6327 is a single enhancement mode N-channel MOSFET device.
This type of MOSFET is easy to use because it is self-biased, meaning it does not require any external bias current or resistance to remain switched on. This MOSFET is suitable for applications that require low-power switching such as motor control, lighting control, and load switching. It is also suitable for applications that require high-power switching such as solar cell array control, high-voltage DC motor control, and DC-DC power conversion.
The BSP324 E6327 features a diode connected between the source and drain, providing a reverse-biased protection against damage caused by static electricity. It has low on-resistance and low capacitance, making it ideal for high-speed switching applications. It also features a low-noise operation, which makes it suitable for audio applications. The MOSFET can be used for both high-side and low-side switching, as well as in both half-bridge and full-bridge configurations.
The working principle of the BSP324 E6327 is simple. When the gate voltage is greater than the source voltage, the MOSFET switches on, allowing current to flow from the source to the drain. When the gate voltage is less than the source voltage, the MOSFET switches off, preventing current from flowing from the source to the drain. Furthermore, this device is relatively easy to use, since no external bias current or resistance is required.
In summary, the BSP324 E6327 is a single enhancement mode N-channel MOSFET device. This MOSFET is a versatile device that can be used in a wide range of applications and is suitable for low-power and high-power switching. It is self-biased, has a reverse-biased protection diode, low on-resistance and low capacitance, and features low-noise operation. The working principle is simple and it requires no external bias current or resistance.
The specific data is subject to PDF, and the above content is for reference
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