BSP316PE6327T Discrete Semiconductor Products |
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Allicdata Part #: | BSP316PE6327XTINTR-ND |
Manufacturer Part#: |
BSP316PE6327T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 100V 0.68A SOT223 |
More Detail: | P-Channel 100V 680mA (Ta) 1.8W (Ta) Surface Mount ... |
DataSheet: | BSP316PE6327T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 170µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 146pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 6.4nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 1.8 Ohm @ 680mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 680mA (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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BSP316PE6327T Application Field and Working Principle
The BSP316PE6327T is a single P-channel enhancement mode power field-effect transistor (FET). This device is ideally suited for low-side load switch and low-side load system applications, as well as power management applications. With features such as a breakdown voltage of 60V, a low on-state resistance of 0.0066 ohms, a gate charge of 22 nC, and a completely ESD rated body diode, this MOSFET is well equipped to protect the system against high loads and ESD.
The BSP316PE6327T is versatile and has a wide range of uses, making it suitable for a variety of applications. For example, it can be used in efficient power supplies, automotive electronics, industrial control and motor control systems, and wireless communications. This FET also provides excellent performance in low-side load switch systems, as it reduces voltage drop and eliminates unwanted heat buildup. Additionally, the low on-resistance capability of this device makes it ideal for battery protection, ensuring an uninterrupted power supply for various electronic components.
The working principle of the BSP316PE6327T is relatively simple. The device is composed of two parts: a P-type gate and a drain source. The gate is the source of electrical energy when it is activated and is connected to a voltage source. When the gate voltage is higher than the source voltage, a current flow is induced across the gate and source. As a result, a potential barrier is created which controls the current through the transistor. This process can be reversed, as the current flow can be stopped as soon as the gate voltage is lower than the source voltage.
The BSP316PE6327T is a great choice for a wide range of applications, with its low-resistance, efficient performance, and robust ESD protection. The device is highly effective and easy to use, with its simple working principle. Furthermore, the device is cost-effective and reliable, making it a great investment for a variety of applications. All in all, the BSP316PE6327T is an ideal choice for low-side load switch systems, power supplies, and other electronic components.
The specific data is subject to PDF, and the above content is for reference
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