Allicdata Part #: | BSP321PL6327HTSA1TR-ND |
Manufacturer Part#: |
BSP321PL6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 100V 0.98A SOT-223 |
More Detail: | P-Channel 100V 980mA (Tc) 1.8W (Ta) Surface Mount ... |
DataSheet: | BSP321PL6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 380µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 319pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 900 mOhm @ 980mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 980mA (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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BSP321PL6327HTSA1, an advanced version of the BSP321 Power MOSFET, is a single N-channel MOSFET transistor which achieves a low on-resistance of 63.27mΩ. This small, yet powerful transistor is well-suited for use in automotive, consumer and industrial applications. Its low power consumption and small size make it a suitable choice for a variety of applications, including motor control, consumer electronics, automotive audio and power supplies.
The BSP321PL6327HTSA1 single channel MOSFET is designed to reduce power loss while operating in a wide range of climates, including high-temperature automotive and industrial applications. Its low gate-source capacitance (1.3pF) provides superior switching performance and improved transient response time.
The transistor is equipped with a wide range of features, including an ultra-low on-resistance and low gate charge, a fast switching speed, and an integrated current-sensing resistor for improved thermal and current performance. The device also comes with an integrated ESD protection diode, making it immune to electrostatic discharge. This device is RoHS compliant, halogen free, and is optimized for low voltage applications (<60V).
The BSP321PL6327HTSA1 utilizes the drain-source voltage (VDS) to control the current flowing through the device. When a voltage is applied to the gate-source terminal (VGS) of the device, it produces a field across the gate oxide which modulates the conductivity of the channel between the source and the drain.
The level at which the current is modulated is dependent on the magnitude of the gate-source voltage (VGS). In the "off" state, the transistor is in a non-conductive state, blocking current flow. In the "on" state, the transistor is in a fully conducting state, allowing current to pass between the source and the drain.
The BSP321PL6327HTSA1 is a versatile device that is suitable for use in automotive, consumer and industrial applications. Its low power consumption and small size make it ideal for applications such as motor control, consumer electronics, automotive audio and power supplies. Its wide range of features, including an integrated ESD protection diode, make it a desirable choice for those looking for a reliable, high-performance transistor.
The specific data is subject to PDF, and the above content is for reference
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