BSP318SH6327XTSA1

Vgs(th) (Max) @ Id:	2V @ 20µA
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	PG-SOT223-4
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.8W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	380pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 10V
Series:	SIPMOS®
Rds On (Max) @ Id, Vgs:	90 mOhm @ 2.6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	2.6A (Tj)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BSP318SH6327XTSA1 application field and working principle

The BSP318SH6327XTSA1 is a monolithic integrated circuit that is an N-channel enhancement mode MOSFET. It is suitable for switching and linear applications operating at voltages up to 65V.The BSP318SH6327XTSA1 has an avalanche energy specified at 3.2mJ. It is produced in a high voltage process with integrated electrostatic protection that has been optimized to reduce the risk of avalanche breakdown.Features of the BSP318SH6327XTSA1 include maximum frequency at 200MHz, incident wave switching, low gate charge (Qg=5.5nC) and low on-resistance (Rds=2.2ohm).The BSP318SH6327XTSA1 application is the the combined use of higher current and higher voltages for automotive, audio and power electronic circuits. Its main application areas include high performances LED lighting, DC/DC buck converters, AC/DC power converters, power amplifiers, and DC motor drives.

Working Principle

The BSP318SH6327XTSA1 is an enhancement mode MOSFET with a bi-directional structure. It utilizes the current conduction of electrons and holes in the channel region. As the channel length decay, the cross section varies in a direction of channel current.By applying a voltage between the source and gate, the electrons and holes present in the channel region of the MOSFET can be attracted towards the source, Modifying the channel width. This decreases the resistance between the source and drain which produces a current in the MOSFET and allows it to be used as a switch.When the Voltage between the source and gate is 0V, the resistance between the source and drain is high. This is known as the Off-State. When the voltage between the source and gate is high, the resistance between the source and drain is low. This is known as the On-State.The BSP318SH6327XTSA1 is special because it has optimized tantalum nitride gate oxide that allows low capacitance between the gate and source. This means that switching times are drastically reduced, making the device suitable for high speed applications.In conclusion, The BSP318SH6327XTSA1 is a high voltage MOSFET with an avalanche energy of 3.2 mJ and low Rds(on). It is suitable for switching and linear applications operating in high voltage and current environments. It\'s optimized for fast switching and can be used in a variety of automotive, lighting, and power electronic circuits.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description