BSZ050N03LSGATMA1 Discrete Semiconductor Products |
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Allicdata Part #: | BSZ050N03LSGATMA1TR-ND |
Manufacturer Part#: |
BSZ050N03LSGATMA1 |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 40A TSDSON-8 |
More Detail: | N-Channel 30V 16A (Ta), 40A (Tc) 2.1W (Ta), 50W (T... |
DataSheet: | BSZ050N03LSGATMA1 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.20178 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TSDSON-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2800pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Ta), 40A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BSZ050N03LSGATMA1 is an N-Channel Enhancement Mode Field-Effect Transistor, a type of switch commonly used in a variety of applications, such as digital logic and power switching. The BSZ050N03LSGATMA1 is often used in high power applications, such as motor control, due to its ability to handle high current and low on-resistance. Additionally, the BSZ050N03LSGATMA1 also offers a number of features, such as integrated protection diodes, which make it a versatile component for all sorts of electronic applications.
Application Field
The BSZ050N03LSGATMA1 is a widely-used N-Channel MOSFET and operates in either enhancement or depletion mode. It can be used in multiple configurations, such as an inverting amplifier, voltage regulation and motor speed control. Additionally, the BSZ050N03LSGATMA1 is also suitable for use in applications operating under high temperatures, as it has a maximum junction temperature of 175°C. The BSZ050N03LSGATMA1 is a great choice for use in a wide range of high power applications.
Working Principle
The working principle of the BSZ050N03LSGATMA1 is based on the main function of a MOSFET – to act as a switch. It uses a drain-source voltage (VDS) to control the conductivity of the channel between the source and drain terminals. When no voltage is applied to the gate, the draining current is very low due to the low resistance of the channel. When a voltage is applied to the gate, the resistance of the channel increases, causing the current to decrease dramatically. The BSZ050N03LSGATMA1 is a P-channel MOSFET, which means the gate voltage must be negative for the device to be in the "on" state. The BSZ050N03LSAGTMAT1 is ideal for applications where low on resistance is required, such as motor control, or applications with high current requirements.
Conclusion
The BSZ050N03LSGATMA1 is a versatile N-Channel MOSFET switch, suitable for use in digital logic, power switching and motor control applications. It is capable of handling high current and low on-resistance and is a great choice for applications operating under high temperatures. With its integrated protection diodes, the BSZ050N03LSGATMA1 is an ideal choice for high power applications.
The specific data is subject to PDF, and the above content is for reference
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