
Allicdata Part #: | BSZ0910NDXTMA1TR-ND |
Manufacturer Part#: |
BSZ0910NDXTMA1 |
Price: | $ 0.40 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIFFERENTIATED MOSFETS |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 9.5A (Ta), 25A... |
DataSheet: | ![]() |
Quantity: | 1000 |
5000 +: | $ 0.35836 |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate, 4.5V Drive |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 9.5A (Ta), 25A (Tc) |
Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 5.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 800pF @ 15V |
Power - Max: | 1.9W (Ta), 31W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PG-WISON-8 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BSZ0910NDXTMA1 is a kind of transistor Array, which has a normally-off insulated gate FET (IGFET) integrated circuit. This seismic-resistant device features a low on-resistance and can give you superior performance at high frequency and low power. Its integrated gate technology reduces the requirements for signal isolation and enables a significant reduction in the input power.
The main application field of BSZ0910NDXTMA1 is in the system level. It can be used in load switch ICs, power ICs, power converters, power supplies, and controllers. It is also useful for system level products that require low noise and high reliability.
The working principle of BSZ0910NDXTMA1 is based on the Insulated Gate Field Effect Transistor (IGFET) technology. The IGFET is a three-terminal electronic device, which uses insulated gate current to control the flow of current from the drain to the source. The IGFET transistor works on the principle of the depletion mode, which means that an off state is the default condition for the device. When a voltage is applied to the gate of the transistor, it turns on and allows current to flow between the drain and the source. In this way, it works just like a switch.
The BSZ0910NDXTMA1 is designed to be able to work in a range of high voltage/low voltage AC and DC supply waveforms, like rectified AC waveforms, and low-voltage waveforms with a wide variation in switching frequency up to more than 500KHz.
The BSZ0910NDXTMA1 also allows for a wide range of temperature operating ranges, ranging from -40°C to +85°C. Furthermore, it features a very low and adjustable output capacitance and the ability to withstand short-term operational voltages higher than the nominal value.
BSZ0910NDXTMA1’s integrated gate technology improves its performance significantly. Its improved power on and power off functions reduce the voltage switching time and help to avoid electrical noise, as well as minimize the power saving number. Additionally, the integrated circuit also features an internal coil that prevents ringing, improves dynamic performance, and reduces power consumption in the long run.
In conclusion, BSZ0910NDXTMA1 is an outstanding device for controlling power in the system level, featuring a low on-resistance, high stability heat resistances, improved power on/off functions and internal coil, as well as high acceptance of input waveforms.
The specific data is subject to PDF, and the above content is for reference
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