BSZ035N03MSGATMA1 Allicdata Electronics
Allicdata Part #:

BSZ035N03MSGATMA1TR-ND

Manufacturer Part#:

BSZ035N03MSGATMA1

Price: $ 0.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 40A TSDSON-8
More Detail: N-Channel 30V 18A (Ta), 40A (Tc) 2.1W (Ta), 69W (T...
DataSheet: BSZ035N03MSGATMA1 datasheetBSZ035N03MSGATMA1 Datasheet/PDF
Quantity: 20000
5000 +: $ 0.30209
Stock 20000Can Ship Immediately
$ 0.34
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TSDSON-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BSZ035N03MSGATMA1 is a part of the surface mount TO-252 package and is a type of power MOSFET device. It is a single p-channel MOSFET and is used in a wide range of electronic devices & applications.

MOSFET are power semiconductor devices which are used to control the flow of current in a circuit in a very efficient manner. They have a number of advantages over other types of power devices such as low cost, small size and high efficiency. MOSFETs are used in a variety of applications such as circuit design, power control, voltage regulation and signal processing. The BSZ035N03MSGATMA1 is a p-channel device which has an exceptionally low power dissipation and is used in a number of types of circuits.

The BSZ035N03MSGATMA1 can be used in motor control circuits, such as for speed control and for controlling the torque or acceleration of a motor. It can also be used for power management in applications such as battery charging, voltage regulation and switching power supplies. In addition, it can be used in audio amplifiers, high frequency circuits and DC-DC power converters.

The BSZ035N03MSGATMA1 is typically used in a power dissipative operation, so that it provides a high-current DC output. The device is enclosed in an insulated body which is designed to protect it from damage due to heat, vibration and mechanical stress. The body also helps to control the flow of heat in order to maximize the device’s efficiency and performance. The device is normally operated in an open loop, with only the input and output connections being used.

The BSZ035N03MSGATMA1 uses a gate-source voltage (VGS) to turn on the device and create a conducting channel between source and drain. The gate-source voltage is typically set to a lower value, with a current limit resistor in the gate for increased safety and reliability. The device can also be used in a closed-loop operation, where the device is connected to an external feedback circuit. This type of circuit keeps the gate-source voltage in a precise range.

The BSZ035N03MSGATMA1 is a high-performance MOSFET and is suitable for a wide range of applications. The device is relatively low cost, yet it offers a high voltage and current rating, good linearity, low power dissipation and low switching times. The device is robust and reliable, making it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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